Assessing strain mapping by electron backscatter diffraction and confocal Raman microscopy using wedge-indented Si.

Friedman, Lawrence H; Vaudin, Mark D; Stranick, Stephan J; Stan, Gheorghe; Gerbig, Yvonne B; Osborn, William; Cook, Robert F

Friedman, Lawrence H; Vaudin, Mark D; Stranick, Stephan J; Stan, Gheorghe; Gerbig, Yvonne B; Osborn, William; Cook, Robert F.

Afiliación

Friedman LH; Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Vaudin MD; Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Stranick SJ; Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Stan G; Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Gerbig YB; Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Osborn W; Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Cook RF; Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA. Electronic address: robert.cook@nist.gov.

Ultramicroscopy ; 163: 75-86, 2016 Apr.

Article en En | MEDLINE | ID: mdl-26939030

Palabras clave

AFM; Confocal Raman Microscopy; EBSD; FEA; Indentation; Strain

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Texto completo: 1 Bases de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Ultramicroscopy Año: 2016 Tipo del documento: Article País de afiliación: Estados Unidos

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