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Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode.
Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M.
Afiliación
  • Chen KH; Department of Electrical Engineering and Computer Science, Tung Fang Design Institute, Kaohsiung, Taiwan. d9131802@gmail.com.
  • Chang KC; Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan.
  • Chang TC; Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan. tcchang@mail.phys.nsysu.edu.tw.
  • Tsai TM; Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, Taiwan. tcchang@mail.phys.nsysu.edu.tw.
  • Liang SP; Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan.
  • Young TF; Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan.
  • Syu YE; Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan.
  • Sze SM; Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan.
Nanoscale Res Lett ; 11(1): 224, 2016 Dec.
Article en En | MEDLINE | ID: mdl-27117634
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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nanoscale Res Lett Año: 2016 Tipo del documento: Article País de afiliación: Taiwán
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nanoscale Res Lett Año: 2016 Tipo del documento: Article País de afiliación: Taiwán