Spin-texture inversion in the giant Rashba semiconductor BiTeI.

Maaß, Henriette; Bentmann, Hendrik; Seibel, Christoph; Tusche, Christian; Eremeev, Sergey V; Peixoto, Thiago R F; Tereshchenko, Oleg E; Kokh, Konstantin A; Chulkov, Evgueni V; Kirschner, Jürgen; Reinert, Friedrich

Maaß, Henriette; Bentmann, Hendrik; Seibel, Christoph; Tusche, Christian; Eremeev, Sergey V; Peixoto, Thiago R F; Tereshchenko, Oleg E; Kokh, Konstantin A; Chulkov, Evgueni V; Kirschner, Jürgen; Reinert, Friedrich.

Afiliación

Maaß H; Experimentelle Physik VII, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany.
Bentmann H; Experimentelle Physik VII, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany.
Seibel C; Experimentelle Physik VII, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany.
Tusche C; Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle, Germany.
Eremeev SV; Institute of Strength Physics and Materials Science, 634055 Tomsk, Russia.
Peixoto TR; Tomsk State University, 634050 Tomsk, Russia.
Tereshchenko OE; Saint Petersburg State University, 198504 Saint Petersburg, Russia.
Kokh KA; Experimentelle Physik VII, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany.
Chulkov EV; Saint Petersburg State University, 198504 Saint Petersburg, Russia.
Kirschner J; Institute of Semiconductor Physics, 636090 Novosibirsk, Russia.
Reinert F; Novosibirsk State University, 636090 Novosibirsk, Russia.

Nat Commun ; 7: 11621, 2016 05 18.

Article en En | MEDLINE | ID: mdl-27188584

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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2016 Tipo del documento: Article País de afiliación: Alemania

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