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Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor.
Lan, Yann-Wen; Torres, Carlos M; Tsai, Shin-Hung; Zhu, Xiaodan; Shi, Yumeng; Li, Ming-Yang; Li, Lain-Jong; Yeh, Wen-Kuan; Wang, Kang L.
Afiliación
  • Lan YW; National Nano Device Laboratories (NDL), National Applied Research Laboratories, Hsinchu, 30078, Taiwan. ywlanblue@gmail.com.
  • Torres CM; Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA, 90095, USA. ywlanblue@gmail.com.
  • Tsai SH; Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA, 90095, USA. torresjrcarlos@gmail.com.
  • Zhu X; Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA, 90095, USA.
  • Shi Y; Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA, 90095, USA.
  • Li MY; Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia.
  • Li LJ; Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia.
  • Yeh WK; Research Center for Applied Sciences, Academia Sinica, Taipei, 10617, Taiwan.
  • Wang KL; Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia.
Small ; 12(41): 5676-5683, 2016 Nov.
Article en En | MEDLINE | ID: mdl-27594654

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Small Asunto de la revista: ENGENHARIA BIOMEDICA Año: 2016 Tipo del documento: Article País de afiliación: Taiwán

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Small Asunto de la revista: ENGENHARIA BIOMEDICA Año: 2016 Tipo del documento: Article País de afiliación: Taiwán