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Flexible resistive random access memory devices by using NiO x /GaN microdisk arrays fabricated on graphene films.
Lee, Keundong; Park, Jong-Woo; Tchoe, Youngbin; Yoon, Jiyoung; Chung, Kunook; Yoon, Hosang; Lee, Sangik; Yoon, Chansoo; Ho Park, Bae; Yi, Gyu-Chul.
Afiliación
  • Lee K; Department of Physics and Astronomy, Institute of Applied Physics and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-747, Republic of Korea.
Nanotechnology ; 28(20): 205202, 2017 May 19.
Article en En | MEDLINE | ID: mdl-28303797
We report flexible resistive random access memory (ReRAM) arrays fabricated by using NiO x /GaN microdisk arrays on graphene films. The ReRAM device was created from discrete GaN microdisk arrays grown on graphene films produced by chemical vapor deposition, followed by deposition of NiO x thin layers and Au metal contacts. The microdisk ReRAM arrays were transferred to flexible plastic substrates by a simple lift-off technique. The electrical and memory characteristics of the ReRAM devices were investigated under bending conditions. Resistive switching characteristics, including cumulative probability, endurance, and retention, were measured. After 1000 bending repetitions, no significant change in the device characteristics was observed. The flexible ReRAM devices, constructed by using only inorganic materials, operated reliably at temperatures as high as 180 °C.

Texto completo: 1 Bases de datos: MEDLINE Tipo de estudio: Clinical_trials Idioma: En Revista: Nanotechnology Año: 2017 Tipo del documento: Article

Texto completo: 1 Bases de datos: MEDLINE Tipo de estudio: Clinical_trials Idioma: En Revista: Nanotechnology Año: 2017 Tipo del documento: Article