Effective absorption correction for energy dispersive X-ray mapping in a scanning transmission electron microscope: analysing the local indium distribution in rough samples of InGaN alloy layers.

Wang, X; Chauvat, M-P; Ruterana, P; Walther, T

Wang, X; Chauvat, M-P; Ruterana, P; Walther, T.

Afiliación

Wang X; Department of Electronic and Electrical Engineering, University of Sheffield, North Campus, Sheffield, UK.
Chauvat MP; CIMAP, UMR 6252, CNRS-ENSICAEN-CEA-UCBN, Caen, Cedex, France.
Ruterana P; CIMAP, UMR 6252, CNRS-ENSICAEN-CEA-UCBN, Caen, Cedex, France.
Walther T; Department of Electronic and Electrical Engineering, University of Sheffield, North Campus, Sheffield, UK.

J Microsc ; 268(3): 248-253, 2017 12.

Article en En | MEDLINE | ID: mdl-28960349

Palabras clave

Absorption correction; X-ray microanalysis; energy-dispersive X-ray spectroscopy (EDXS); indium gallium nitride (InGaN); islanding; transmission electron microscopy (TEM)

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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: J Microsc Año: 2017 Tipo del documento: Article País de afiliación: Reino Unido

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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: J Microsc Año: 2017 Tipo del documento: Article País de afiliación: Reino Unido