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Surface plasmon induced direct detection of long wavelength photons.
Tong, Jinchao; Zhou, Wei; Qu, Yue; Xu, Zhengji; Huang, Zhiming; Zhang, Dao Hua.
Afiliación
  • Tong J; School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 639798, Singapore, Singapore.
  • Zhou W; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, 200083, Shanghai, China.
  • Qu Y; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, 200083, Shanghai, China.
  • Xu Z; School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 639798, Singapore, Singapore.
  • Huang Z; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, 200083, Shanghai, China. zmhuang@mail.sitp.ac.cn.
  • Zhang DH; Key Laboratory of Space Active Opto-Electronics Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, 200083, Shanghai, China. zmhuang@mail.sitp.ac.cn.
Nat Commun ; 8(1): 1660, 2017 11 21.
Article en En | MEDLINE | ID: mdl-29162817
Millimeter and terahertz wave photodetectors have long been of great interest due to a wide range of applications, but they still face challenges in detection performance. Here, we propose a new strategy for the direct detection of millimeter and terahertz wave photons based on localized surface-plasmon-polariton (SPP)-induced non-equilibrium electrons in antenna-assisted subwavelength ohmic metal-semiconductor-metal (OMSM) structures. The subwavelength OMSM structure is used to convert the absorbed photons into localized SPPs, which then induce non-equilibrium electrons in the structure, while the antenna increases the number of photons coupled into the OMSM structure. When the structure is biased and illuminated, the unidirectional flow of the SPP-induced non-equilibrium electrons forms a photocurrent. The energy of the detected photons is determined by the structure rather than the band gap of the semiconductor. The detection scheme is confirmed by simulation and experimental results from the devices, made of gold and InSb, and a room temperature noise equivalent power (NEP) of 1.5 × 10-13 W Hz-1/2 is achieved.

Texto completo: 1 Bases de datos: MEDLINE Tipo de estudio: Diagnostic_studies Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2017 Tipo del documento: Article País de afiliación: Singapur

Texto completo: 1 Bases de datos: MEDLINE Tipo de estudio: Diagnostic_studies Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2017 Tipo del documento: Article País de afiliación: Singapur