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Strong field transient manipulation of electronic states and bands.
Crassee, I; Gallmann, L; Gäumann, G; Matthews, M; Yanagisawa, H; Feurer, T; Hengsberger, M; Keller, U; Osterwalder, J; Wörner, H J; Wolf, J P.
Afiliación
  • Crassee I; Applied Physics, GAP, University of Geneva, 22 Ch. de Pinchat, 1211 Geneva 4, Switzerland.
  • Gäumann G; Institute of Applied Physics, University of Bern, Sidlerstr 5, 3012 Bern, Switzerland.
  • Matthews M; Applied Physics, GAP, University of Geneva, 22 Ch. de Pinchat, 1211 Geneva 4, Switzerland.
  • Yanagisawa H; Department of Physics, University of Zurich, Winterthurerstr 190, 8057 Zurich, Switzerland.
  • Feurer T; Institute of Applied Physics, University of Bern, Sidlerstr 5, 3012 Bern, Switzerland.
  • Hengsberger M; Department of Physics, University of Zurich, Winterthurerstr 190, 8057 Zurich, Switzerland.
  • Keller U; Department of Physics, Institute for Quantum Electronics, ETH-Zurich, 8093 Zurich, Switzerland.
  • Osterwalder J; Department of Physics, University of Zurich, Winterthurerstr 190, 8057 Zurich, Switzerland.
  • Wörner HJ; Physical Chemistry Laboratory, ETHZ, Vladimir-Prelog-Weg 2, 8093 Zurich, Switzerland.
  • Wolf JP; Applied Physics, GAP, University of Geneva, 22 Ch. de Pinchat, 1211 Geneva 4, Switzerland.
Struct Dyn ; 4(6): 061505, 2017 Nov.
Article en En | MEDLINE | ID: mdl-29308417
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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Struct Dyn Año: 2017 Tipo del documento: Article País de afiliación: Suiza
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Struct Dyn Año: 2017 Tipo del documento: Article País de afiliación: Suiza