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Low-Frequency Raman Spectroscopy of Few-Layer 2H-SnS2.
Sriv, Tharith; Kim, Kangwon; Cheong, Hyeonsik.
Afiliación
  • Sriv T; Department of Physics, Sogang University, Seoul, 04107, Korea.
  • Kim K; Department of Physics, Royal University of Phnom Penh, Phnom Penh, Cambodia.
  • Cheong H; Department of Physics, Sogang University, Seoul, 04107, Korea.
Sci Rep ; 8(1): 10194, 2018 Jul 05.
Article en En | MEDLINE | ID: mdl-29977081
ABSTRACT
We investigated interlayer phonon modes of mechanically exfoliated few-layer 2H-SnS2 samples by using room temperature low-frequency micro-Raman spectroscopy. Raman measurements were performed using laser wavelengths of 441.6, 514.4, 532 and 632.8 nm with power below 100 µW and inside a vacuum chamber to avoid photo-oxidation. The intralayer Eg and A1g modes are observed at ~206 cm-1 and 314 cm-1, respectively, but the Eg mode is much weaker for all excitation energies. The A1g mode exhibits strong resonant enhancement for the 532 nm (2.33 eV) laser. In the low-frequency region, interlayer vibrational modes of shear and breathing modes are observed. These modes show characteristic dependence on the number of layers. The strengths of the interlayer interactions are estimated by fitting the interlayer mode frequencies using the linear chain model and are found to be 1.64 × 1019 N · m-3 and 5.03 × 1019 N · m-3 for the shear and breathing modes, respectively.

Texto completo: 1 Bases de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Sci Rep Año: 2018 Tipo del documento: Article

Texto completo: 1 Bases de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Sci Rep Año: 2018 Tipo del documento: Article