Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection.
Biosensors (Basel)
; 8(3)2018 Jul 27.
Article
en En
| MEDLINE
| ID: mdl-30060476
ABSTRACT
Application of micro-Raman spectroscopy for the monitoring of quality of high-k (h-k) dielectric protective layer deposition onto the surface of a nanowire (NW) chip has been demonstrated. A NW chip based on silicon-on-insulator (SOI) structures, protected with a layer of high-k dielectric ((h-k)-SOI-NW chip), has been employed for highly sensitive detection of microRNA (miRNA) associated with oncological diseases. The protective dielectric included a 2-nm-thick Al2O3 surface layer and a 8-nm-thick HfO2 layer, deposited onto a silicon SOI-NW chip. Such a chip had increased time stability upon operation in solution, as compared with an unprotected SOI-NW chip with native oxide. The (h-k)-SOI-NW biosensor has been employed for the detection of DNA oligonucleotide (oDNA), which is a synthetic analogue of miRNA-21 associated with oncological diseases. To provide biospecificity of the detection, the surface of (h-k)-SOI-NW chip was modified with oligonucleotide probe molecules (oDVA probes) complementary to the sequence of the target biomolecule. Concentration sensitivity of the (h-k)-SOI-NW biosensor at the level of DL~10-16 M has been demonstrated.
Palabras clave
Texto completo:
1
Bases de datos:
MEDLINE
Asunto principal:
Espectrometría Raman
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Técnicas Biosensibles
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MicroARNs
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Procedimientos Analíticos en Microchip
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Nanocables
Tipo de estudio:
Diagnostic_studies
Idioma:
En
Revista:
Biosensors (Basel)
Año:
2018
Tipo del documento:
Article
País de afiliación:
Rusia