Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors.
Materials (Basel)
; 11(9)2018 Sep 18.
Article
en En
| MEDLINE
| ID: mdl-30231500
ABSTRACT
This paper reports low temperature solution processed ZnO thin film transistors (TFTs), and the effects of interfacial passivation of a 4-chlorobenzoic acid (PCBA) layer on device performance. It was found that the ZnO TFTs with PCBA interfacial modification layers exhibited a higher electron mobility of 4.50 cm² V-1 s-1 compared to the pristine ZnO TFTs with a charge carrier mobility of 2.70 cm² V-1 s-1. Moreover, the ZnO TFTs with interfacial modification layers could significantly improve device shelf-life stability and bias stress stability compared to the pristine ZnO TFTs. Most importantly, interfacial modification layers could also decrease the contact potential barrier between the source/drain electrodes and the ZnO films when using high work-function metals such as Ag and Au. These results indicate that high performance TFTs can be obtained with a low temperature solution process with interfacial modification layers, which strongly implies further potential for their applications.
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Bases de datos:
MEDLINE
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En
Revista:
Materials (Basel)
Año:
2018
Tipo del documento:
Article
País de afiliación:
China