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Laser-Regulated 60 mA Current Switching in VO2-Based Two-Terminal Device Using 976 nm Laser Diode.
Kim, Jihoon; Jeong, Sun Jae; Choi, Sungwook; Lee, Seul-Lee; Kim, Min Seok; Kim, Dokyeong; Kim, Bong-Jun; Lee, Yong Wook.
Afiliación
  • Kim J; School of Electrical Engineering, Pukyong National University, 45 Yongso-ro, Nam-gu, Busan 48513, Korea.
  • Jeong SJ; Interdisciplinary Program of Biomedical Mechanical and Electrical Engineering, Pukyong National University, 45 Yongso-ro, Nam-gu, Busan 48513, Korea.
  • Choi S; Interdisciplinary Program of Biomedical Mechanical and Electrical Engineering, Pukyong National University, 45 Yongso-ro, Nam-gu, Busan 48513, Korea.
  • Lee SL; Interdisciplinary Program of Biomedical Mechanical and Electrical Engineering, Pukyong National University, 45 Yongso-ro, Nam-gu, Busan 48513, Korea.
  • Kim MS; Interdisciplinary Program of Biomedical Mechanical and Electrical Engineering, Pukyong National University, 45 Yongso-ro, Nam-gu, Busan 48513, Korea.
  • Kim D; Interdisciplinary Program of Biomedical Mechanical and Electrical Engineering, Pukyong National University, 45 Yongso-ro, Nam-gu, Busan 48513, Korea.
  • Kim BJ; Mobrik Co. Ltd., 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea.
  • Lee YW; School of Electrical Engineering, Pukyong National University, 45 Yongso-ro, Nam-gu, Busan 48513, Korea.
J Nanosci Nanotechnol ; 19(3): 1620-1625, 2019 03 01.
Article en En | MEDLINE | ID: mdl-30469233
ABSTRACT
By incorporating a high-power 976 nm laser diode (LD), we demonstrated laser-regulated current switching in a two-terminal planar device based on a vanadium dioxide (VO2) thin film. The VO2 thin film was grown by pulsed laser deposition method and etched to sub-millimeter dimension for the fabrication of a two-terminal device. The reversible current switching was implemented by controlling the on/off state of the LD, which illuminates the VO2-based device. The transient responses of the device currents were analyzed when the device was excited with laser pulses of various repetition rates of up to 5.0 Hz with a pulse width fixed as 75 ms. A switching contrast between off- and on-state currents was calculated as ~9530, and average rising and falling times were measured as ~31 and ~21 ms, respectively.

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Año: 2019 Tipo del documento: Article

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Año: 2019 Tipo del documento: Article