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Potassium-Presenting Zinc Oxide Surfaces Induce Vertical Phase Separation in Fullerene-Free Organic Photovoltaics.
Cheng, Hao-Wen; Raghunath, Putikam; Wang, Kai-Li; Cheng, Pei; Haung, Tianyi; Wu, Quantan; Yuan, Jun; Lin, Yu-Che; Wang, Hao-Cheng; Zou, Yingping; Wang, Zhao-Kui; Lin, M C; Wei, Kung-Hwa; Yang, Yang.
Afiliación
  • Cheng HW; Department of Materials Science and Engineering , California NanoSystems Institute, University of California , Los Angeles , California 90095 , United States.
  • Raghunath P; Department of Materials Science and Engineering , Center for Emergent Functional Matter Science, National Chiao Tung University , Hsinchu 30010 , Taiwan.
  • Wang KL; Department of Applied Chemistry and Institute of Molecular Science , Center for Emergent Functional Matter Science, National Chiao Tung University , Hsinchu 30010 , Taiwan.
  • Cheng P; Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices Soochow , University Suzhou , Jiangsu 215123 , China.
  • Haung T; Department of Materials Science and Engineering , California NanoSystems Institute, University of California , Los Angeles , California 90095 , United States.
  • Wu Q; Department of Materials Science and Engineering , California NanoSystems Institute, University of California , Los Angeles , California 90095 , United States.
  • Yuan J; Department of Materials Science and Engineering , California NanoSystems Institute, University of California , Los Angeles , California 90095 , United States.
  • Lin YC; College of Chemistry and Chemical Engineering , Central South University , Changsha 410083 , China.
  • Wang HC; Department of Materials Science and Engineering , California NanoSystems Institute, University of California , Los Angeles , California 90095 , United States.
  • Zou Y; Department of Materials Science and Engineering , Center for Emergent Functional Matter Science, National Chiao Tung University , Hsinchu 30010 , Taiwan.
  • Wang ZK; Department of Materials Science and Engineering , California NanoSystems Institute, University of California , Los Angeles , California 90095 , United States.
  • Lin MC; Department of Materials Science and Engineering , Center for Emergent Functional Matter Science, National Chiao Tung University , Hsinchu 30010 , Taiwan.
  • Wei KH; College of Chemistry and Chemical Engineering , Central South University , Changsha 410083 , China.
  • Yang Y; Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices Soochow , University Suzhou , Jiangsu 215123 , China.
Nano Lett ; 20(1): 715-721, 2020 Jan 08.
Article en En | MEDLINE | ID: mdl-31870153
ABSTRACT
Bulk heterojunction (BHJ) structure based organic photovoltaics (OPVs) have recently showed great potential for achieving high power conversion efficiencies (PCEs). An ideal BHJ structure would feature large donor/acceptor interfacial areas for efficient exciton dissociation and gradient distributions with high donor and acceptor concentrations near the anode and cathode, respectively, for efficient charge extraction. However, the random mixing of donors and acceptors in the BHJ often suffers the severe charge recombination in the interface, resulting in poor charge extraction. Herein, we propose a new approach-treating the surface of the zinc oxide (ZnO) as an electron transport layer with potassium hydroxide-to induce vertical phase separation of an active layer incorporating the nonfullerene acceptor IT-4F. Density functional theory calculations suggested that the binding energy difference between IT-4F and the PBDB-T-2Cl, to the potassium (K)-presenting ZnO interface, is twice as strong as that for IT-4F and PBDB-T-2Cl to the untreated ZnO surface, such that it would induce more IT-4F moving toward the K-presenting ZnO interface than the untreated ZnO interface thermodynamically. Benefiting from efficient charge extraction, the best PCEs increased to 12.8% from 11.8% for PBDB-T-2ClIT-4F-based devices, to 12.6% from 11.6% for PBDB-T-2ClY1-4F-based devices, to 13.5% from 12.2% for PBDB-T-2ClY6-based devices, and to 15.7% from 15.1% for PM6Y6-based devices.
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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2020 Tipo del documento: Article País de afiliación: Estados Unidos

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2020 Tipo del documento: Article País de afiliación: Estados Unidos