Understanding homoepitaxial growth of horizontal kinked GaN nanowires.

Wu, Shaoteng; Yi, Xiaoyan; Tian, Shuang; Zhang, Shuo; Liu, Zhiqiang; Wang, Liancheng; Wang, Junxi; Li, Jinmin.

Afiliación

Wu S; State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China.
Yi X; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing, 100049, People's Republic of China.
Tian S; State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China.
Zhang S; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing, 100049, People's Republic of China.
Liu Z; Jiangsu Key Laboratory for Advanced Metallic Materials, School of Materials Science and Engineering, Southeast University, Nanjing 211189, People's Republic of China.
Wang L; State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China.
Wang J; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing, 100049, People's Republic of China.
Li J; State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China.

Nanotechnology ; 32(9): 095606, 2021 Feb 26.

Article en En | MEDLINE | ID: mdl-33212433

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2021 Tipo del documento: Article

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2021 Tipo del documento: Article