Origins of structural and electronic transitions in disordered silicon.

Deringer, Volker L; Bernstein, Noam; Csányi, Gábor; Ben Mahmoud, Chiheb; Ceriotti, Michele; Wilson, Mark; Drabold, David A; Elliott, Stephen R

Deringer, Volker L; Bernstein, Noam; Csányi, Gábor; Ben Mahmoud, Chiheb; Ceriotti, Michele; Wilson, Mark; Drabold, David A; Elliott, Stephen R.

Afiliación

Deringer VL; Department of Chemistry, Inorganic Chemistry Laboratory, University of Oxford, Oxford, UK. volker.deringer@chem.ox.ac.uk.
Bernstein N; Center for Materials Physics and Technology, US Naval Research Laboratory, Washington, DC, USA.
Csányi G; Engineering Laboratory, University of Cambridge, Cambridge, UK.
Ben Mahmoud C; Laboratory of Computational Science and Modeling, IMX, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland.
Ceriotti M; National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland.
Wilson M; Laboratory of Computational Science and Modeling, IMX, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland.
Drabold DA; National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland.
Elliott SR; Department of Chemistry, Physical and Theoretical Chemistry Laboratory, University of Oxford, Oxford, UK.

Nature ; 589(7840): 59-64, 2021 01.

Article en En | MEDLINE | ID: mdl-33408379

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Texto completo: 1 Bases de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Nature Año: 2021 Tipo del documento: Article País de afiliación: Reino Unido

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