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Electrical Characterizations of Planar Ga2O3 Schottky Barrier Diodes.
Zhang, Shiyu; Liu, Zeng; Liu, Yuanyuan; Zhi, Yusong; Li, Peigang; Wu, Zhenping; Tang, Weihua.
Afiliación
  • Zhang S; Laboratory of Information Functional Materials and Devices, School of Science & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
  • Liu Z; Laboratory of Information Functional Materials and Devices, School of Science & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
  • Liu Y; College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
  • Zhi Y; National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
  • Li P; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Wu Z; The Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Tang W; Laboratory of Information Functional Materials and Devices, School of Science & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
Micromachines (Basel) ; 12(3)2021 Mar 03.
Article en En | MEDLINE | ID: mdl-33802423
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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2021 Tipo del documento: Article País de afiliación: China
Texto completo
Imprimir
XML
PubMed Links
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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2021 Tipo del documento: Article País de afiliación: China