Your browser doesn't support javascript.
loading
Analog Synaptic Transistor with Al-Doped HfO2 Ferroelectric Thin Film.
Kim, Duho; Jeon, Yu-Rim; Ku, Boncheol; Chung, Chulwon; Kim, Tae Heun; Yang, Sanghyeok; Won, Uiyeon; Jeong, Taeho; Choi, Changhwan.
Afiliación
  • Kim D; Division of Materials Science & Engineering, Hanyang University, Seoul 04763, Republic of Korea.
  • Jeon YR; Division of Materials Science & Engineering, Hanyang University, Seoul 04763, Republic of Korea.
  • Ku B; Division of Materials Science & Engineering, Hanyang University, Seoul 04763, Republic of Korea.
  • Chung C; Department of Energy Engineering, Hanyang University, Seoul 04763, Republic of Korea.
  • Kim TH; Division of Materials Science & Engineering, Hanyang University, Seoul 04763, Republic of Korea.
  • Yang S; Institute of Fundamental and Advanced Technology, Hyundai Motor Group, Uiwang-si 16082, Gyeonggi-do Republic of Korea.
  • Won U; Institute of Fundamental and Advanced Technology, Hyundai Motor Group, Uiwang-si 16082, Gyeonggi-do Republic of Korea.
  • Jeong T; Institute of Fundamental and Advanced Technology, Hyundai Motor Group, Uiwang-si 16082, Gyeonggi-do Republic of Korea.
  • Choi C; Division of Materials Science & Engineering, Hanyang University, Seoul 04763, Republic of Korea.
ACS Appl Mater Interfaces ; 13(44): 52743-52753, 2021 Nov 10.
Article en En | MEDLINE | ID: mdl-34723461
Palabras clave
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2021 Tipo del documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2021 Tipo del documento: Article