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Template Engineering of Metal-to-Insulator Transitions in Epitaxial Bilayer Nickelate Thin Films.
Lee, Jongmin; Kim, Gi-Yeop; Jeong, Seyeop; Yang, Mihyun; Kim, Jong-Woo; Cho, Byeong-Gwan; Choi, Yongseong; Kim, Sangmo; Choi, Jin San; Lee, Tae Kwon; Kim, Jiwoong; Lee, Dong Ryeol; Chang, Seo Hyoung; Park, Sungkyun; Jung, Jong Hoon; Bark, Chung Wung; Koo, Tae-Young; Ryan, Philip J; Ihm, Kyuwook; Kim, Sanghoon; Choi, Si-Young; Kim, Tae Heon; Lee, Sanghan.
Afiliación
  • Lee J; School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea.
  • Kim GY; Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea.
  • Jeong S; Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea.
  • Yang M; Pohang Accelerator Laboratory, Pohang 37673, Republic of Korea.
  • Kim JW; Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States.
  • Cho BG; Pohang Accelerator Laboratory, Pohang 37673, Republic of Korea.
  • Choi Y; Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States.
  • Kim S; Department of Electrical Engineering, Gachon University, Seongnam 13120, Republic of Korea.
  • Choi JS; Department of Physics, University of Ulsan and Energy Harvest-Storage Research Center (EHSRC), Ulsan 44610, Republic of Korea.
  • Lee TK; Department of Physics, Inha University, Incheon 22212, Republic of Korea.
  • Kim J; Department of Physics, Pusan National University, Busan 46241, Republic of Korea.
  • Lee DR; Department of Physics, Soongsil University, Seoul 06978, Republic of Korea.
  • Chang SH; Department of Physics, Chung-Ang University, Seoul 06974, Republic of Korea.
  • Park S; Department of Physics, Pusan National University, Busan 46241, Republic of Korea.
  • Jung JH; Department of Physics, Inha University, Incheon 22212, Republic of Korea.
  • Bark CW; Department of Electrical Engineering, Gachon University, Seongnam 13120, Republic of Korea.
  • Koo TY; Pohang Accelerator Laboratory, Pohang 37673, Republic of Korea.
  • Ryan PJ; Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States.
  • Ihm K; Pohang Accelerator Laboratory, Pohang 37673, Republic of Korea.
  • Kim S; Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea.
  • Choi SY; Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea.
  • Kim TH; Department of Physics, University of Ulsan and Energy Harvest-Storage Research Center (EHSRC), Ulsan 44610, Republic of Korea.
  • Lee S; School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea.
ACS Appl Mater Interfaces ; 13(45): 54466-54475, 2021 Nov 17.
Article en En | MEDLINE | ID: mdl-34739229
Understanding metal-to-insulator phase transitions in solids has been a keystone not only for discovering novel physical phenomena in condensed matter physics but also for achieving scientific breakthroughs in materials science. In this work, we demonstrate that the transport properties (i.e., resistivity and transition temperature) in the metal-to-insulator transitions of perovskite nickelates are tunable via the epitaxial heterojunctions of LaNiO3 and NdNiO3 thin films. A mismatch in the oxygen coordination environment and interfacial octahedral coupling at the oxide heterointerface allows us to realize an exotic phase that is unattainable in the parent compound. With oxygen vacancy formation for strain accommodation, the topmost LaNiO3 layer in LaNiO3/NdNiO3 bilayer thin films is structurally engineered and it electrically undergoes a metal-to-insulator transition that does not appear in metallic LaNiO3. Modification of the NdNiO3 template layer thickness provides an additional knob for tailoring the tilting angles of corner-connected NiO6 octahedra and the linked transport characteristics further. Our approaches can be harnessed to tune physical properties in complex oxides and to realize exotic physical phenomena through oxide thin-film heterostructuring.
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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2021 Tipo del documento: Article

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2021 Tipo del documento: Article