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Enhancing Perpendicular Magnetic Anisotropy in Garnet Ferrimagnet by Interfacing with Few-Layer WTe2.
Wu, Guanzhong; Wang, Dongying; Verma, Nishchhal; Rao, Rahul; Cheng, Yang; Guo, Side; Cao, Guixin; Watanabe, Kenji; Taniguchi, Takashi; Lau, Chun Ning; Yang, Fengyuan; Randeria, Mohit; Bockrath, Marc; Hammel, P Chris.
Afiliación
  • Wu G; Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States.
  • Wang D; Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States.
  • Verma N; Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States.
  • Rao R; Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433, United States.
  • Cheng Y; Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States.
  • Guo S; Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States.
  • Cao G; Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States.
  • Watanabe K; Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
  • Taniguchi T; International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
  • Lau CN; Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States.
  • Yang F; Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States.
  • Randeria M; Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States.
  • Bockrath M; Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States.
  • Hammel PC; Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States.
Nano Lett ; 22(3): 1115-1121, 2022 Feb 09.
Article en En | MEDLINE | ID: mdl-35099980
ABSTRACT
Engineering magnetic anisotropy in a ferro- or ferrimagnetic (FM) thin film is crucial in a spintronic device. One way to modify the magnetic anisotropy is through the surface of the FM thin film. Here, we report the emergence of a perpendicular magnetic anisotropy (PMA) induced by interfacial interactions in a heterostructure comprised of a garnet ferrimagnet, Y3Fe5O12 (YIG), and a low-symmetry, high spin-orbit coupling (SOC) transition metal dichalcogenide, WTe2. At the same time, we also observed an enhancement in Gilbert damping in the WTe2-covered YIG area. Both the magnitude of interface-induced PMA and the Gilbert damping enhancement have no observable WTe2 thickness dependence down to a single quadruple layer, indicating that the interfacial interaction plays a critical role. The ability of WTe2 to enhance the PMA in FM thin film, combined with its previously reported capability to generate out-of-plane damping like spin torque, makes it desirable for magnetic memory applications.
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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2022 Tipo del documento: Article País de afiliación: Estados Unidos

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2022 Tipo del documento: Article País de afiliación: Estados Unidos