Band offset trends in IV-VI layered semiconductor heterojunctions.
J Phys Condens Matter
; 34(19)2022 Mar 09.
Article
en En
| MEDLINE
| ID: mdl-35189609
ABSTRACT
The band offsets between semiconductors are significantly associated with the optoelectronic characteristics and devices design. Here, we investigate the band offset trends of few-layer and bulk IV-VI semiconductors MX and MX2(M = Ge, Sn; X = S, Se, Te). For common-cation (anion) systems, as the atomic number increases, the valence band offset of MX decreases, while that of MX2has no distinct change, and the physical origin can be interpreted using band coupling mechanism and atomic potential trend. The band edges of GeX2system straddle redox potentials of water, making them competitive candidates for photocatalyst. Moreover, layer number modulation can induce the band offset of GeSe/SnS and GeSe2/GeS2heterojunction undergoing a transition from type I to type II, which makes them suitable for optoelectronic applications.
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Bases de datos:
MEDLINE
Idioma:
En
Revista:
J Phys Condens Matter
Asunto de la revista:
BIOFISICA
Año:
2022
Tipo del documento:
Article