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Searching for Band-Dispersive and Defect-Tolerant Semiconductors from Element Substitution in Topological Materials.
Huang, Menglin; Wang, Shanshan; Zhang, Tao; Chen, Shiyou.
Afiliación
  • Huang M; Key Laboratory of Computational Physical Sciences (MOE), and State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Wang S; Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai 200241, China.
  • Zhang T; Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai 200241, China.
  • Chen S; Key Laboratory of Computational Physical Sciences (MOE), and State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
J Am Chem Soc ; 144(10): 4685-4694, 2022 Mar 16.
Article en En | MEDLINE | ID: mdl-35239340
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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: J Am Chem Soc Año: 2022 Tipo del documento: Article País de afiliación: China
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: J Am Chem Soc Año: 2022 Tipo del documento: Article País de afiliación: China