Electrochemical Construction of Edge-Contacted Metal-Semiconductor Junctions with Low Contact Barrier.

Ping, Xiaofan; Liu, Weigang; Wu, Yueyang; Xu, Guanchen; Chen, Fengen; Li, Guangtao; Jiao, Liying

Ping, Xiaofan; Liu, Weigang; Wu, Yueyang; Xu, Guanchen; Chen, Fengen; Li, Guangtao; Jiao, Liying.

Afiliación

Ping X; Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China.
Liu W; Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China.
Wu Y; Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China.
Xu G; Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China.
Chen F; Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China.
Li G; Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China.
Jiao L; Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China.

Adv Mater ; 34(31): e2202484, 2022 Aug.

Article en En | MEDLINE | ID: mdl-35642101

Palabras clave

2D; electrodeposition; field-effect transistors; low contact barrier; metal-semiconductor junctions

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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2022 Tipo del documento: Article País de afiliación: China

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