Lowering Contact Resistances of Two-Dimensional Semiconductors by Memristive Forming.
Nano Lett
; 22(17): 7094-7103, 2022 Sep 14.
Article
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| MEDLINE
| ID: mdl-36053055
ABSTRACT
Two-dimensional semiconductors have great potential for beyond-silicon electronics. However, because of the lack of controllable doping methods, Fermi level pinning, and van der Waals (vdW) gaps at the metal-semiconductor interfaces, these devices exhibit high electrical contact resistances, restricting their practical applications. Here, we report a general contact-resistance-lowering strategy by constructing vertical metal-semiconductor-metal memristor structures at the contact regions and setting them into a nonvolatile low-resistance state through a memristive forming process. Through this, we reduce the contact resistances of MoS2 field-effect transistors (FETs) by at least one order of magnitude and improve the on-state current densities of MoTe2 FETs by about two orders of magnitude. We also demonstrate that this strategy is applicable to other two-dimensional semiconductors, including MoSe2, WS2, and WSe2, and a variety of contact metals, including Au, Cu, Ni, and Pd. The good stability and universality indicate the great potential for technological applications.
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MEDLINE
Idioma:
En
Revista:
Nano Lett
Año:
2022
Tipo del documento:
Article
País de afiliación:
China