Twist-Induced Modification in the Electronic Structure of Bilayer WSe<sub>2</sub>.

Pei, Ding; Zhou, Zishu; He, Zhihai; An, Liheng; Gao, Han; Xiao, Hanbo; Chen, Cheng; He, Shanmei; Barinov, Alexei; Liu, Jianpeng; Weng, Hongming; Wang, Ning; Liu, Zhongkai; Chen, Yulin

Twist-Induced Modification in the Electronic Structure of Bilayer WSe₂.

Pei, Ding; Zhou, Zishu; He, Zhihai; An, Liheng; Gao, Han; Xiao, Hanbo; Chen, Cheng; He, Shanmei; Barinov, Alexei; Liu, Jianpeng; Weng, Hongming; Wang, Ning; Liu, Zhongkai; Chen, Yulin.

Afiliación

Pei D; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China.
Zhou Z; Department of Physics, University of Oxford, Oxford OX1 3PU, United Kingdom.
He Z; ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 200031, People's Republic of China.
An L; Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong 999078, People's Republic of China.
Gao H; Department of Physics, School of Science, Jimei University, Xiamen 361021, People's Republic of China.
Xiao H; Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong 999078, People's Republic of China.
Chen C; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China.
He S; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China.
Barinov A; Department of Physics, University of Oxford, Oxford OX1 3PU, United Kingdom.
Liu J; Department of Physics, University of Oxford, Oxford OX1 3PU, United Kingdom.
Weng H; Elettra-Sincrotrone Trieste, Trieste, Basovizza 34149, Italy.
Wang N; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China.
Liu Z; ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 200031, People's Republic of China.
Chen Y; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.

Nano Lett ; 23(15): 7008-7013, 2023 Aug 09.

Article en En | MEDLINE | ID: mdl-37466311

ABSTRACT

ABSTRACT

The recent discovery of strongly correlated phases in twisted transition-metal dichalcogenides (TMDs) highlights the significant impact of twist-induced modifications on electronic structures. In this study, we employed angle-resolved photoemission spectroscopy with submicrometer spatial resolution (µ-ARPES) to investigate these modifications by comparing valence band structures of twisted (5.3°) and nontwisted (AB-stacked) bilayer regions within the same WSe2 device. Relative to the nontwisted region, the twisted area exhibits pronounced moiré bands and â¼90 meV renormalization at the Γ-valley, substantial momentum separation between different layers, and an absence of flat bands at the K-valley. We further simulated the effects of lattice relaxation, which can flatten the Γ-valley edge but not the K-valley edge. Our results provide a direct visualization of twist-induced modifications in the electronic structures of twisted TMDs and elucidate their valley-dependent responses to lattice relaxation.

Palabras clave

ARPES; lattice relaxation; moiré bands; twisted WSe2

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