Lattice modulation strategies for 2D material assisted epitaxial growth.

Chen, Qi; Yang, Kailai; Liang, Meng; Kang, Junjie; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin; Liu, Zhiqiang

Chen, Qi; Yang, Kailai; Liang, Meng; Kang, Junjie; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin; Liu, Zhiqiang.

Afiliación

Chen Q; Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Yang K; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
Liang M; Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Kang J; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
Yi X; Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Wang J; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
Li J; Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China. kangjunjie@semi.ac.cn.
Liu Z; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China. kangjunjie@semi.ac.cn.

Nano Converg ; 10(1): 39, 2023 Aug 25.

Article en En | MEDLINE | ID: mdl-37626161

Palabras clave

2D material; Remote epitaxy; vdW epitaxy

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Texto completo: 1 Bases de datos: MEDLINE Tipo de estudio: Guideline Idioma: En Revista: Nano Converg Año: 2023 Tipo del documento: Article País de afiliación: China

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