High detectivity Ge photodetector at 940â
nm achieved by growing strained-Ge with a top Si stressor.
Opt Express
; 32(6): 10490-10504, 2024 Mar 11.
Article
en En
| MEDLINE
| ID: mdl-38571259
ABSTRACT
We have developed a self-powered near-infrared photodetector (PD) with high detectivity using a tensile strained Ge layer capped with a thick Si layer. The Si layer acts as a stressor and maintains the strain of Ge with minimal dislocations by creating a rough surface. By using Raman spectroscopy, we confirmed that the Ge layer has a 1.83% in-plane tensile strain. The Ge PD exhibits a high responsivity of 0.45 A/W at -1â
V bias voltage for 940â
nm wavelength. The PD's dark current density is as low as â¼1.50 × 10-6 A/cm2 at -1â
V. The high responsivity and low dark current result in a detectivity as high as 6.55 × 1011 cmHz1/2/W. This Ge PD has great potential for applications in light detection and ranging (LiDAR), Internet of Things (IoTs), and Optical Sensing Networks.
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MEDLINE
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En
Revista:
Opt Express
Asunto de la revista:
OFTALMOLOGIA
Año:
2024
Tipo del documento:
Article