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Insight into Facile Ion Diffusion in Resistive Switching Medium toward Low Operating Voltage Memory.
Do, Dinh Phuc; Bui, Viet Q; Nguyen, Minh Chien; Seo, Sohyeon; Do, Van Dam; Kim, Joosung; Choi, Jungsue; Ko, Hyun; Yu, Woo Jong; Kawazoe, Yoshiyuki; Lee, Hyoyoung.
Afiliación
  • Do DP; Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea.
  • Bui VQ; Advanced Institute of Science and Technology, The University of Danang, 41 Le Duan, Danang 92026, Vietnam.
  • Nguyen MC; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
  • Seo S; Creative Research Institute, Sungkyunkwan University, Suwon 16419, Republic of Korea.
  • Do VD; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
  • Kim J; Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea.
  • Choi J; Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea.
  • Ko H; Institute of Quantum Biophysics, Sungkyunkwan University, 2066 Seoburo, Jangan-gu, Suwon 16419, Korea.
  • Yu WJ; Department of Biophysics, Sungkyunkwan University, Suwon 16419, South Korea.
  • Kawazoe Y; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
  • Lee H; New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan.
Nano Lett ; 24(26): 7999-8007, 2024 Jul 03.
Article en En | MEDLINE | ID: mdl-38900975
ABSTRACT
The rapid increase in data storage worldwide demands a substantial amount of energy consumption annually. Studies looking at low power consumption accompanied by high-performance memory are essential for next-generation memory. Here, Graphdiyne oxide (GDYO), characterized by facile resistive switching behavior, is systematically reported toward a low switching voltage memristor. The intrinsic large, homogeneous pore-size structure in GDYO facilitates ion diffusion processes, effectively suppressing the operating voltage. The theoretical approach highlights the remarkably low diffusion energy of the Ag ion (0.11 eV) and oxygen functional group (0.6 eV) within three layers of GDYO. The Ag/GDYO/Au memristor exhibits an ultralow operating voltage of 0.25 V with a GDYO thickness of 5 nm; meanwhile, the thicker GDYO of 29 nm presents multilevel memory with an ON/OFF ratio of up to 104. The findings shed light on memory resistive switching behavior, facilitating future improvements in GDYO-based devices toward opto-memristors, artificial synapses, and neuromorphic applications.
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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2024 Tipo del documento: Article

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2024 Tipo del documento: Article