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Initialization-Free and Magnetic Field-Free Spin-Orbit p-Bits with Backhopping-like Magnetization Switching for Probabilistic Applications.
Ren, Ruizhi; Cao, Yi; Wang, Chao; Guan, Yicheng; Liu, Shuai; Wang, Lijin; Du, Zeting; Feng, Chun; Bekele, Zelalem Abebe; Lan, Xiukai; Zhang, Nan; Yang, Guang; Wang, Le; Li, Baohe; Hu, Yong; Liu, Yan; Parkin, Stuart; Wang, Kaiyou; Yu, Guanghua.
Afiliación
  • Ren R; School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China.
  • Cao Y; College of Sciences, Northeastern University, Shenyang 110819, China.
  • Wang C; School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China.
  • Guan Y; School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China.
  • Liu S; Max Planck Institute for Microstructure Physics, 06120 Halle, Germany.
  • Wang L; Department of Physics, Beijing Technology and Business University, Beijing 100048, China.
  • Du Z; School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China.
  • Feng C; School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China.
  • Bekele ZA; School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China.
  • Lan X; State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Zhang N; State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Yang G; State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Wang L; Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
  • Li B; Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China.
  • Hu Y; Department of Physics, Beijing Technology and Business University, Beijing 100048, China.
  • Liu Y; College of Sciences, Northeastern University, Shenyang 110819, China.
  • Parkin S; College of Sciences, Northeastern University, Shenyang 110819, China.
  • Wang K; Max Planck Institute for Microstructure Physics, 06120 Halle, Germany.
  • Yu G; State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Nano Lett ; 24(33): 10072-10080, 2024 Aug 21.
Article en En | MEDLINE | ID: mdl-39132906
ABSTRACT
Probabilistic bits (p-bits) with thermal- and spin torque-induced nondeterministic magnetization switching are promising candidates for performing probabilistic computing. Previously reported spin torque p-bits include volatile low-energy barrier nanomagnets (LBNMs) with spontaneously fluctuating magnetizations and initialization-necessary nonvolatile magnets. However, initialization-free nonvolatile spin torque p-bits are still lacking. Here, we demonstrate moderately thermal stable spin-orbit torque (SOT) p-bits with non-consecutively deposited Pt//Pt/Co/Pt stacks. Backhopping-like (BH) magnetization switching with a wide range current-tunable probability of final up and down magnetization states from 0% to 100% was achieved, regardless of the initial magnetization state, which was attributed to the interplay of SOT and thermal contributions. Integer factorization using such BH-SOT p-bits in zero magnetic field was demonstrated at times that are significantly shorter than those of existing nonvolatile STT or volatile LBNMs p-bits. Our realization of initialization-free and magnetic field-free moderately thermally stable BH-SOT p-bits opens up a new perspective for probabilistic spintronic applications.
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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2024 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2024 Tipo del documento: Article País de afiliación: China