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Publisher Correction: Single-crystalline metal-oxide dielectrics for top-gate 2D transistors.
Zeng, Daobing; Zhang, Ziyang; Xue, Zhongying; Zhang, Miao; Chu, Paul K; Mei, Yongfeng; Tian, Ziao; Di, Zengfeng.
Afiliación
  • Zeng D; State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China.
  • Zhang Z; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China.
  • Xue Z; State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China.
  • Zhang M; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China.
  • Chu PK; State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China.
  • Mei Y; State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China.
  • Tian Z; Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Kowloon, China.
  • Di Z; Department of Materials Science, Fudan University, Shanghai, China.
Nature ; 633(8031): E5, 2024 Sep.
Article en En | MEDLINE | ID: mdl-39242797
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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nature Año: 2024 Tipo del documento: Article País de afiliación: China
Texto completo
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PubMed Links
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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nature Año: 2024 Tipo del documento: Article País de afiliación: China