Towards Infrared Electronic Eyes: Flexible Colloidal Quantum Dot Photovoltaic Detectors Enhanced by Resonant Cavity.

Electronic eye cameras are receiving increasing interest due to their unique advantages such as wide field of view, low aberrations, and simple imaging optics compared to conventional planar focal plane arrays. However, the spectral sensing ranges of most electronic eyes are confined to the visible, which is limited by the energy gaps of the sensing materials and by fabrication obstacles. Here, a potential route leading to infrared electronic eyes is demonstrated by exploring flexible colloidal quantum dot (CQD) photovoltaic detectors. Benefitting from their tunable optical response and the ease of fabrication as solution processable materials, mercury telluride (HgTe) CQD detectors with mechanical flexibility, wide spectral sensing range, fast response, and high detectivity are demonstrated. A strategy is provided to further enhance the light absorption in flexible detectors by integrating a Fabry-Perot resonant cavity. Integrated short-wave IR detectors on flexible substrates have peak D* of 7.5 × 1010 Jones at 2.2 µm at room temperature and promise the development of infrared electronic eyes with high-resolution imaging capability. Finally, infrared images are captured with the flexible CQD detectors at varying bending conditions, showing a practical approach to sensitive infrared electronic eyes beyond the visible range.

Enhanced Thermal Stability of Conductive Mercury Telluride Colloidal Quantum Dot Thin Films Using Atomic Layer Deposition.

Colloidal quantum dots (CQDs) are valuable for their potential applications in optoelectronic devices. However, they are susceptible to thermal degradation during processing and while in use. Mitigating thermally induced sintering, which leads to absorption spectrum broadening and undesirable changes to thin film electrical properties, is necessary for the reliable design and manufacture of CQD-based optoelectronics. Here, low-temperature metal-oxide atomic layer deposition (ALD) was investigated as a method for mitigating sintering while preserving the optoelectronic properties of mercury telluride (HgTe) CQD films. ALD-coated films are subjected to temperatures up to 160 °C for up to 5 h and alumina (Al2O3) is found to be most effective at preserving the optical properties, demonstrating the feasibility of metal-oxide in-filling to protect against sintering. HgTe CQD film electrical properties were investigated before and after alumina ALD in-filling, which was found to increase the p-type doping and hole mobility of the films. The magnitude of these effects depended on the conditions used to prepare the HgTe CQDs. With further investigation into the interaction effects of CQD and ALD process factors, these results may be used to guide the design of CQD-ALD materials for their practical integration into useful optoelectronic devices.

Direct Imprinting of Quasi-3D Nanophotonic Structures into Colloidal Quantum-Dot Devices.

Three-dimensional (3D) subwavelength nanostructures have emerged and triggered tremendous excitement because of their advantages over the two-dimensional (2D) counterparts in fields of plasmonics, photonic crystals, and metamaterials. However, the fabrication and integration of 3D nanophotonic structures with colloidal quantum dots (CQDs) faces several technological obstacles, as conventional lithographic and etching techniques may affect the surface chemistry of colloidal nanomaterials. Here, the direct fabrication of functional quasi-3D nanophotonic structures into CQD films is demonstrated by one-step imprinting with well-controlled precision in both vertical and lateral directions. To showcase the potential of this technique, diffraction gratings, bilayer wire-grid polarizers, and resonant metal mesh long-pass filters are imprinted on CQD films without degrading the optical and electrical properties of CQD. Furthermore, a dual-diode CQD detector into an unprecedented mid-wave infrared two-channel polarization detector is functionalized by embedding an imprinted bilayer wire-grid polarizer within the CQDs. The results show that this approach offers a feasible pathway to combine quasi-3D nanostructures with colloidal materials-based optoelectronics and access a new level of light manipulation.

Fast and Sensitive Colloidal Quantum Dot Mid-Wave Infrared Photodetectors.

Colloidal quantum dots (CQDs) with a band gap tunable in the mid-wave infrared (MWIR) region provide a cheap alternative to epitaxial commercial photodetectors such as HgCdTe (MCT) and InSb. Photoconductive HgTe CQD devices have demonstrated the potential of CQDs for MWIR photodetection but face limitations in speed and sensitivity. Recently, a proof-of-concept HgTe photovoltaic (PV) detector was realized, achieving background-limited infrared photodetection at cryogenic temperatures. Using a modified PV device architecture, we report up to 2 orders of magnitude improvement in the sensitivity of the HgTe CQD photodetectors. A solid-state cation exchange method was introduced during device fabrication to chemically modify the interface potential, leading to an order of magnitude improvement of external quantum efficiency at room temperature. At 230 K, the HgTe CQD photodetectors reported here achieve a sensitivity of 109 Jones with a cutoff wavelength between 4 and 5 µm, which is comparable to that of commercial photodetectors. In addition to the chemical treatment, a thin-film interference structure was devised using an optical spacer to achieve near unity internal quantum efficiency upon reducing the operating temperature. The enhanced sensitivity of the HgTe CQD photodetectors reported here should motivate interest in a cheap, solution-processed MWIR photodetector for applications extending beyond research and military defense.

Thermal Imaging with Plasmon Resonance Enhanced HgTe Colloidal Quantum Dot Photovoltaic Devices.

Thermal imaging in the midwave infrared plays an important role for numerous applications. The key functionality is imaging devices in the atmospheric window between 3 and 5 µm, where disturbance from fog, dust, and other atmospheric influence could be avoided. Here, we demonstrate sensitive thermal imaging with HgTe colloidal quantum dot (CQD) photovoltaic detectors by integrating the HgTe CQDs with plasmonic structures. The responsivity at 5 µm is enhanced 2- to 3-fold over a wide range of operating temperatures from 295 to 85 K. A detectivity of 4 × 1011 Jones is achieved at cryogenic temperature. The noise equivalent temperature difference is 14 mK at an acquisition rate of 1 kHz for a 200 µm pixel. Thermal images are captured with a single-pixel scanning imaging system.