120-GBaud 16-QAM silicon photonics IQ modulator for data center interconnection.

We demonstrated all-silicon IQ modulators (IQMs) operating at 120-GBaud 16-QAM with suitable bandwidth, and output power. We required optical signal-to-noise-ratio (rOSNR) that have promising potential to be used in 800-Gbps small-form-factor pluggable transceivers for data center interconnection. First, we tested an IQM chip using discrete drivers and achieved a per-polarization TX output power of -18.74 dBm and an rOSNR of 23.51 dB over a 100-km standard SMF. Notably, a low BER of 1.4e-3 was obtained using our SiP IQM chip without employing nonlinear compensation, optical equalization, or an ultra-wide-bandwidth, high-ENOB OMA. Furthermore, we investigated the performance of a 3D packaged transmitter by emulating its frequency response using an IQM chip, discrete drivers, and a programmable optical filter. With a laser power of 17 dBm, we achieved a per-polarization output power of -15.64 dBm and an rOSNR of 23.35 dB.

Phase noise characterization of a QD-based diode laser frequency comb.

We measure, simultaneously, the phases of a large set of comb lines from a passively mode locked, InAs/InP, quantum dot laser frequency comb (QDLFC) by comparing the lines to a stable comb reference using multi-heterodyne coherent detection. Simultaneity permits the separation of differential and common mode phase noise and a straightforward determination of the wavelength corresponding to the minimum width of the comb line. We find that the common mode and differential phases are uncorrelated, and measure for the first time for a QDLFC that the intrinsic differential-mode phase (IDMP) between adjacent subcarriers is substantially the same for all subcarrier pairs. The latter observation supports an interpretation of 4.4ps as the standard deviation of IDMP on a 200µs time interval for this laser.