Real-time reflectance anisotropy spectroscopy of GaAs homoepitaxy.

Reflectance anisotropy spectroscopy (RAS) is a highly sensitive optical probe for the real-time study of the epitaxial growth of zincblende semiconductors. Here we report on (1) non-equilibrium RAS spectra acquired in real time during the homoepitaxial growth of GaAs, and (2) RAS spectra for GaAs surfaces under equilibrium with several arsenic overpressures. We show that in both cases RAS spectra can be decomposed into two basic components, each with a characteristic line shape. We further show that both dynamic and equilibrium RAS spectra are described by the same pair of basic components. We conclude that the time evolution of non-equilibrium RAS spectra acquired during the epitaxial growth can be described in terms of RAS spectra for equilibrium surfaces. The results reported here should be useful for the interpretation of the physics underlying the rapid time evolution of dynamic RAS spectra during the first monolayer growth. Thus, we show that RAS constitutes a valuable tool for the study of epitaxial growth mechanisms.

Digital holographic interferometry applied to the investigation of ignition process.

We use the digital holographic interferometry (DHI) technique to display the early ignition process for a butane-air mixture flame. Because such an event occurs in a short time (few milliseconds), a fast CCD camera is used to study the event. As more detail is required for monitoring the temporal evolution of the process, less light coming from the combustion is captured by the CCD camera, resulting in a deficient and underexposed image. Therefore, the CCD's direct observation of the combustion process is limited (down to 1000 frames per second). To overcome this drawback, we propose the use of DHI along with a high power laser in order to supply enough light to increase the speed capture, thus improving the visualization of the phenomenon in the initial moments. An experimental optical setup based on DHI is used to obtain a large sequence of phase maps that allows us to observe two transitory stages in the ignition process: a first explosion which slightly emits visible light, and a second stage induced by variations in temperature when the flame is emerging. While the last stage can be directly monitored by the CCD camera, the first stage is hardly detected by direct observation, and DHI clearly evidences this process. Furthermore, our method can be easily adapted for visualizing other types of fast processes.

Temperature-dependent infrared ellipsometry of Mo-doped VO2 thin films across the insulator to metal transition.

We present a spectroscopic ellipsometry study of Mo-doped VO2 thin films deposited on silicon substrates for the mid-infrared range. The dielectric functions and conductivity were extracted from analytical fittings of Ψ and Δ ellipsometric angles showing a strong dependence on the dopant concentration and the temperature. Insulator-to-metal transition (IMT) temperature is found to decrease linearly with increasing doping level. A correction to the classical Drude model (termed Drude-Smith) has been shown to provide excellent fits to the experimental measurements of dielectric constants of doped/undoped films and the extracted parameters offer an adequate explanation for the IMT based on the carriers backscattering across the percolation transition. The smoother IMT observed in the hysteresis loops as the doping concentration is increased, is explained by charge density accumulation, which we quantify through the integral of optical conductivity. In addition, we describe the physics behind a localized Fano resonance that has not yet been demonstrated and explained in the literature for doped/undoped VO2 films.