Engineering charge injection and charge transport for high performance PbSe nanocrystal thin film devices and circuits.

We study charge injection and transport in PbSe nanocrystal thin films. By engineering the contact metallurgy and nanocrystal ligand exchange chemistry and surface passivation, we demonstrate partial Fermi-level pinning at the metal-nanocrystal interface and an insulator-to-metal transition with increased coupling and doping, allowing us to design high conductivity and mobility PbSe nanocrystal films. We construct complementary nanocrystal circuits from n-type and p-type transistors realized from a single nanocrystal material by selecting the contact metallurgy.

Designing high-performance PbS and PbSe nanocrystal electronic devices through stepwise, post-synthesis, colloidal atomic layer deposition.

We report a simple, solution-based, postsynthetic colloidal, atomic layer deposition (PS-cALD) process to engineer stepwise the surface stoichiometry and therefore the electronic properties of lead chalcogenide nanocrystal (NC) thin films integrated in devices. We found that unlike chalcogen-enriched NC surfaces that are structurally, optically, and electronically unstable, lead chloride treatment creates a well-passivated shell that stabilizes the NCs. Using PS-cALD of lead chalcogenide NC thin films we demonstrate high electron field-effect mobilities of ∼4.5 cm(2)/(V s).

Plasmon-enhanced upconversion luminescence in single nanophosphor-nanorod heterodimers formed through template-assisted self-assembly.

We demonstrate plasmonic enhancement of upconversion luminescence in individual nanocrystal heterodimers formed by template-assisted self-assembly. Lithographically defined, shape-selective templates were used to deterministically coassemble single Au nanorods in proximity to single hexagonal (ß-phase) NaYF4:Yb(3+),Er(3+) upconversion nanophosphors. By tailoring the dimensions of the rods to spectrally tune their longitudinal surface plasmon resonance to match the 977 nm excitation wavelength of the phosphors and by spatially localizing the phosphors in the intense near-fields surrounding the rod tips, several-fold luminescence enhancements were achieved. The enhancement effects exhibited a strong dependence on the excitation light's polarization relative to the rod axis. In addition, greater enhancement was observed at lower excitation power densities due to the nonlinear behavior of the upconversion process. The template-based coassembly scheme utilized here for plasmonic coupling offers a versatile platform for improving our understanding of optical interactions among individual chemically prepared nanocrystal components.

Stoichiometric control of lead chalcogenide nanocrystal solids to enhance their electronic and optoelectronic device performance.

We investigate the effects of stoichiometric imbalance on the electronic properties of lead chalcogenide nanocrystal films by introducing excess lead (Pb) or selenium (Se) through thermal evaporation. Hall-effect and capacitance-voltage measurements show that the carrier type, concentration, and Fermi level in nanocrystal solids may be precisely controlled through their stoichiometry. By manipulating only the stoichiometry of the nanocrystal solids, we engineer the characteristics of electronic and optoelectronic devices. Lead chalcogenide nanocrystal field-effect transistors (FETs) are fabricated at room temperature to form ambipolar, unipolar n-type, and unipolar p-type semiconducting channels as-prepared and with excess Pb and Se, respectively. Introducing excess Pb forms nanocrystal FETs with electron mobilities of 10 cm(2)/(V s), which is an order of magnitude higher than previously reported in lead chalcogenide nanocrystal devices. Adding excess Se to semiconductor nanocrystal solids in PbSe Schottky solar cells enhances the power conversion efficiency.