Programmable photonic circuits.

The growing maturity of integrated photonic technology makes it possible to build increasingly large and complex photonic circuits on the surface of a chip. Today, most of these circuits are designed for a specific application, but the increase in complexity has introduced a generation of photonic circuits that can be programmed using software for a wide variety of functions through a mesh of on-chip waveguides, tunable beam couplers and optical phase shifters. Here we discuss the state of this emerging technology, including recent developments in photonic building blocks and circuit architectures, as well as electronic control and programming strategies. We cover possible applications in linear matrix operations, quantum information processing and microwave photonics, and examine how these generic chips can accelerate the development of future photonic circuits by providing a higher-level platform for prototyping novel optical functionalities without the need for custom chip fabrication.

Vacuum-sealed silicon photonic MEMS tunable ring resonator with an independent control over coupling and phase.

Ring resonators are a vital element for filters, optical delay lines, or sensors in silicon photonics. However, reconfigurable ring resonators with low-power consumption are not available in foundries today. We demonstrate an add-drop ring resonator with the independent tuning of round-trip phase and coupling using low-power microelectromechanical (MEMS) actuation. At a wavelength of 1540 nm and for a maximum voltage of 40 V, the phase shifters provide a resonance wavelength tuning of 0.15 nm, while the tunable couplers can tune the optical resonance extinction ratio at the through port from 0 to 30 dB. The optical resonance displays a passive quality factor of 29 000, which can be increased to almost 50 000 with actuation. The MEMS rings are individually vacuum-sealed on wafer scale, enabling reliable and long-term protection from the environment. We cycled the mechanical actuators for more than 4 × 109 cycles at 100 kHz, and did not observe degradation in their response curves. On mechanical resonance, we demonstrate a modulation increase of up to 15 dB, with a voltage bias of 4 V and a peak drive amplitude as low as 20 mV.

Micro-transfer printing InP C-band SOAs on advanced silicon photonics platform for lossless MZI switch fabrics and high-speed integrated transmitters.

We present an approach for the heterogeneous integration of InP semiconductor optical amplifiers (SOAs) and lasers on an advanced silicon photonics (SiPh) platform by using micro-transfer-printing (µTP). After the introduction of the µTP concept, the focus of this paper shifts to the demonstration of two C-band III-V/Si photonic integrated circuits (PICs) that are important in data-communication networks: an optical switch and a high-speed optical transmitter. First, a C-band lossless and high-speed Si Mach-Zehnder interferometer (MZI) switch is demonstrated by co-integrating a set of InP SOAs with the Si MZI switch. The micro-transfer-printed SOAs provide 10 dB small-signal gain around 1560 nm with a 3 dB bandwidth of 30 nm. Secondly, an integrated transmitter combining an on-chip widely tunable laser and a doped-Si Mach-Zehnder modulator (MZM) is demonstrated. The laser has a continuous tuning range over 40 nm and the transmitter is capable of 40 Gbps non-return-to-zero (NRZ) back-to-back transmission at wavelengths ranging from 1539 to 1573 nm. These demonstrations pave the way for the realization of complex and fully integrated photonic systems-on-chip with integrated III-V-on-Si components, and this technique is transferable to other material films and devices that can be released from their native substrate.

Disk-loaded silicon micro-ring resonator for high-Q resonance.

By adding two disks to a standard silicon micro-ring resonator, a very high-quality factor (Q) asymmetric resonance with Q values as high as 7.773 × 105 and slope rates in excess of 880 dB/nm can be achieved. A circuit model has been proposed for this device based on which an analysis has been carried out that can predict the effect of reflections in the coupling components. Depending on the coupling coefficient between the disks and the micro-ring resonator (MRR), it is possible to use this design in three regimes, with different spectral features. Moreover, it is shown that the disks introduce a discontinuity in the transmission spectrum and the relative positioning of the disks in the ring provides a new degree of freedom in the design step. The proposed device features a high extinction ratio (ER) around 1550 nm and could be fabricated in any standard silicon photonics technology without requiring any extra materials or processing steps. The proposed resonator has a high sensitivity of ΔλRes (nm)/Δn > 299 nm/RIU, which makes it suitable for sensing applications and efficient modulators.

Silicon photonic microelectromechanical phase shifters for scalable programmable photonics.

Programmable photonic integrated circuits are emerging as an attractive platform for applications such as quantum information processing and artificial neural networks. However, current programmable circuits are limited in scalability by the lack of low-power and low-loss phase shifters in commercial foundries. Here, we demonstrate a compact phase shifter with low-power photonic microelectromechanical system (MEMS) actuation on a silicon photonics foundry platform (IMEC's iSiPP50G). The device attains (2.9π±π) phase shift at 1550 nm, with an insertion loss of (0.33-0.10+0.15)dB, a Vπ of (10.7-1.4+2.2)V, and an Lπ of (17.2-4.3+8.8)µm. We also measured an actuation bandwidth f-3dB of 1.03 MHz in air. We believe that our demonstration of a low-loss and low-power photonic MEMS phase shifter implemented in silicon photonics foundry compatible technology lifts a main roadblock toward the scale-up of programmable photonic integrated circuits.

Correlation between pattern density and linewidth variation in silicon photonics waveguides.

We describe the correlation between the measured width of silicon waveguides fabricated with 193 nm lithography and the local pattern density of the mask layout. In the fabrication process, pattern density can affect the composition of the plasma in a dry etching process or the abrasion rate in a planarization step. Using an optical test circuit to extract waveguide width and thickness, we sampled 5841 sites over a fabricated wafer. Using this detailed sampling, we could establish the correlation between the linewidth and average pattern density around the test circuit, as a function of the radius of influence. We find that the intra-die systematic width variation correlates most with the pattern density within a radius of 200 µm, with a correlation coefficient of 0.57. No correlation between pattern density and the intra-die systematic thickness variation is observed. These findings can be used to predict photonic circuit yield or to optimize the circuit layout to minimize the effect of local pattern density.

Tolerant, broadband tunable 2 × 2 coupler circuit.

We propose a circuit design for a broadband tunable 2 × 2 waveguide coupler, consisting of a two-stage Mach-Zehnder interferometer with electro-optic phase shifters in each stage. We demonstrate that such design can be configured as a tunable coupler with arbitrary coupling ratio and with a uniform response over 50-nm spectral range around 1550 nm. The design is also tolerant to fabrication variations that affect the coupling ratios of the directional couplers.

Compact broadband suspended silicon photonic directional coupler.

Directional couplers are extensively used in photonic integrated circuits as basic components for efficient on-chip photonic signal routing. Conventionally, directional couplers are fully encapsulated in the technology's waveguide cladding material. In this Letter, we demonstrate a compact broadband directional coupler, fully suspended in air and exhibiting efficient power coupling in the cross state. The coupler is designed and built based on IMEC's iSiPP50G standard platform, and hydrofluoric (HF) vapor-etching-based post-processing allows to release the freestanding component. A low insertion loss of 0.5 dB at λ=1560nm and a 1 dB bandwidth of 35 nm at λ=1550nm have been confirmed experimentally. With a small footprint of 20µm×30µm and high mechanical stability, this directional coupler can serve as a basic building block for large-scale silicon photonic microelectromechanical systems (MEMS) circuits.

Pure phase modulation based on a silicon plasma dispersion modulator.

Plasma dispersion modulators (PDMs), such as carrier injection modulators and carrier depletion modulators, are widely used for high speed phase modulation in silicon photonic circuits, but they suffer from spurious intensity modulation. This can be a problem in coherent communication systems that make use of complex multi-level quadrature modulation formats, as well as analog applications such as microwave photonics. In this article, a method to achieve pure phase modulation using PDMs is proposed based on a configurable modulator circuit. The configurable modulator is implemented as a Mach-Zehnder interferometer with a PDM and tunable couplers (TCs). The spurious intensity modulation of the phase modulated lightwave can be compensated by tuning the coupling ratios of the TCs and the phase delay between the two arms of the MZI. Simulation results show that for a depletion modulator, the 1.26 dB spurious intensity modulation can be suppressed down to 0.023 dB within a phase range of 0.4π, and for injection modulator, the 1.27 dB spurious intensity modulation can be suppressed down to 0.07 dB within a phase range of 0.76π.

Silicon ring resonators with a free spectral range robust to fabrication variations.

We propose a design method for silicon ring resonators (RRs) with a free spectral range (FSR) insensitive to fabrication variations. Two waveguide-core widths are used in the RR, with opposite signs of the group-index derivative with respect to the width. This results in cancellation of the width-dependent FSR changes. The systematic deviation of the realized width from the design width is determined and is used for calibrating the calculated relation of group index versus width. This enables a more accurate FSR value and well-aimed robust performance. We present two robust design examples. Experimental results match well with the predictions. For the deliberately introduced ±10 nm core-width change, the FSR variation of the robust designs is only about 30% of the value measured from the RR with a single core width. This design method can be used to improve the performance of photonic integrated circuits using multiple RRs. As the FSR of a RR is not easily tunable, the robust design is beneficial to applications where an accurate FSR is required, such as in microwave photonics.

Fundamental suppression of backscattering in silicon microrings.

In this paper we theoretically prove and experimentally demonstrate a novel approach to eliminate the effects of backscattering in silicon ring resonators. Not only the resonance-splitting can be completely suppressed, but also the unwanted light reflected to the in port and directed to the add port can be dramatically reduced. Ring resonators have become one of the most intensively used integrated optical components for various applications. However, in high-index-contrast platforms like silicon photonics, sidewall roughness induced backscattering imposes limits on the performance of ring resonators. It frequently induces resonance-splitting in through and drop ports. At the same time, there will be unwanted light directed to the add port and reflected to the in port. We show that, by putting an intentional tunable reflector inside the ring to compete with the stochastic backscattering, the ring can work under a normal condition. All resonances can be tuned to be non-split with an improved extinction ratio and there will be significantly less light coming out from the in and the add ports.

Tunable electromagnetically induced transparency in integrated silicon photonics circuit.

We comprehensively simulate and experimentally demonstrate a novel approach to generate tunable electromagnetically induced transparency (EIT) in a fully integrated silicon photonics circuit. It can also generate tunable fast and slow light. The circuit is a single ring resonator with two integrated tunable reflectors inside, which form an embedded Fabry-Perot (FP) cavity inside the ring cavity. The mode of the FP cavity can be controlled by tuning the reflections using integrated thermo-optic tuners. Under correct tuning conditions, the interaction of the FP mode and the ring resonance mode will generate a Fano resonance and an EIT response. The extinction ratio and bandwidth of the EIT can be tuned by controlling the reflectors. Measured group delay proves that both fast light and slow light can be generated under different tuning conditions. A maximum group delay of 1100 ps is observed because of EIT. Pulse advance around 1200 ps is also demonstrated.

Digitally controlled multiplexed silicon photonics phase shifter using heaters with integrated diodes.

We present a silicon side heater with integrated diode to provide multiplexed control of different elements in a photonic circuit based on the polarity of the driving signal. The diode introduces an asymmetric electrical response where the heater is only active under forward bias. This can be used to address multiple heaters through the same electrical electrical contacts. We demonstrate push-pull operation on a Mach-Zehnder interferometer with heaters in both arms, as well as time-multiplexed operation of multiple heaters by modulating the driving signal. We extend this work by demonstrating how pulse width modulation (PWM) and duobinary-PWM can be used to improve the linearity of the response of the phase shifters.

Experimental demonstration of a single silicon ring resonator with an ultra-wide FSR and tuning range.

We present an experimental realization of a pseudo single-mode silicon ring resonator with an ultra-wide free spectral range and tuning range. The device is a single microring resonator with a tunable reflector integrated inside. The reflector is designed to have zero reflection for only one resonance of the ring, while all other resonances will suffer strong reflection. Given that the reflection inside a ring resonator leads to resonance splitting and degradation of the extinction ratio (ER), we obtain a ring resonator where only a single resonance has a large ER, while all others have a very low ER. The large ER resonance can be continuously tuned using metal heaters to achieve a broad tuning range over 55 nm with 16 mW of power injected into the phase shifter.

Electrically tuneable lateral leakage loss in liquid crystal clad shallow-etched silicon waveguides.

We demonstrate electrical tuning of the lateral leakage loss of TM-like modes in nematic liquid crystal (LC) clad shallow-etched Silicon-on-Insulator (SOI) waveguides. The refractive index of the LC layer can be modulated by applying a voltage over it. This results in a modulation of the effective index of the SOI waveguide modes. Since the leakage loss is linked to these effective indices, tunable leakage loss of the waveguides is achieved. We switch the wavelength at which the minimum in leakage loss occurs by 39.5nm (from 1564nm to 1524.5nm) in a 785nm wide waveguide. We show that the leakage loss in this waveguide can either be increased or decreased by modulating the refractive index of the LC cladding at a fixed wavelength.

Silicon dual-ring modulator driven by differential signal.

A silicon dual-ring modulator consisting of two serially cascaded rings with embedded PN junctions is driven by a differential signal pair. We show by simulation and experiment that the device has advantages over the single-ring modulator in terms of optical bandwidth, 3-dB modulation bandwidth and bit rate, at the expense of a 1.7-dB increase in the transmission penalty and a twofold increase of the RF power consumption. Driven by differential pseudo random binary sequence (PRBS) signals of 0.5-V peak-to-peak voltage (Vpp), the dual-ring modulator exhibits optical bandwidths of 66 pm and 40 pm at 12.5 Gb/s and 20 Gb/s, respectively. In contrast, the single-ring modulator has an optical bandwidth of 26 pm under a single-end PRBS signal of 0.5 Vpp at 12.5 Gb/s, and its eye diagram closes if the bit rate rises to 20 Gb/s.

Tuning the lateral leakage loss of TM-like modes in shallow-etched waveguides using liquid crystals.

We examine the tuning effect a liquid crystal (LC) cladding has on the lateral leakage loss of TM-like modes in shallow-etched waveguides. For such waveguides with an air cladding, the guided TM-like mode and the unguided cladding TE-like mode can only be phase matched at precisely one angle. We find that for an anisotropic cladding such as an LC, this phase matching is now possible for a range of angles. Each of these angles corresponds to a given orientation of the molecules in the LC cladding. We show that the waveguide width at which the minimum in leakage loss occurs can be changed by varying the orientation of the LC cladding. We find different tuning regimes, identify a suitable tuning range, and discuss the feasibility of tunable leakage loss experiments.

Roadmapping the next generation of silicon photonics.

Silicon photonics has developed into a mainstream technology driven by advances in optical communications. The current generation has led to a proliferation of integrated photonic devices from thousands to millions-mainly in the form of communication transceivers for data centers. Products in many exciting applications, such as sensing and computing, are around the corner. What will it take to increase the proliferation of silicon photonics from millions to billions of units shipped? What will the next generation of silicon photonics look like? What are the common threads in the integration and fabrication bottlenecks that silicon photonic applications face, and which emerging technologies can solve them? This perspective article is an attempt to answer such questions. We chart the generational trends in silicon photonics technology, drawing parallels from the generational definitions of CMOS technology. We identify the crucial challenges that must be solved to make giant strides in CMOS-foundry-compatible devices, circuits, integration, and packaging. We identify challenges critical to the next generation of systems and applications-in communication, signal processing, and sensing. By identifying and summarizing such challenges and opportunities, we aim to stimulate further research on devices, circuits, and systems for the silicon photonics ecosystem.

Correction: Integrated silicon photonic MEMS.

[This corrects the article DOI: 10.1038/s41378-023-00498-z.].

Silicon-organic hybrid (SOH) IQ modulator using the linear electro-optic effect for transmitting 16QAM at 112 Gbit/s.

Advanced modulation formats call for suitable IQ modulators. Using the silicon-on-insulator (SOI) platform we exploit the linear electro-optic effect by functionalizing a photonic integrated circuit with an organic χ(2)-nonlinear cladding. We demonstrate that this silicon-organic hybrid (SOH) technology allows the fabrication of IQ modulators for generating 16QAM signals with data rates up to 112 Gbit/s. To the best of our knowledge, this is the highest single-polarization data rate achieved so far with a silicon-integrated modulator. We found an energy consumption of 640 fJ/bit.