Nanoparticle composites for printed electronics.

Printed Electronics is a rapidly developing sector in the electronics industry, in which nanostructured materials are playing an increasingly important role. In particular, inks containing dispersions of semiconducting nanoparticles, can form nanocomposite materials with unique electronic properties when cured. In this study we have extended on our previous studies of functional nanoparticle electronic inks, with the development of a solvent-based silicon ink for printed electronics which is compatible with existing silver inks, and with the investigation of other metal nanoparticle based inks. It is shown that both solvent-based and water-based inks can be used for both silver conductors and semiconducting silicon, and that qualitatively there is no difference in the electronic properties of the materials printed with a soluble polymer binder to when an acrylic binder is used.

Quantitative investigations of aggregate systems.

Nanomaterials with disordered, ramified structure are increasingly being used for applications where low cost and enhanced performance are desired. A particular example is the use in printed electronics of inorganic conducting and semiconducting nanoparticles. The electrical, as well as other physical properties depend on the arrangement and connectivity of the particles in such aggregate systems. Quantification of aggregate structure and development of structure/property relationships is difficult and progress in the application of these materials in electronics has mainly been empirical. In this paper, a scaling model is used to parameterize the structure of printed electronic layers. This model has chiefly been applied to polymers but surprisingly it shows applicability to these nanolayers. Disordered structures of silicon nanoparticles forming aggregates are investigated using small angle x-ray scattering coupled with the scaling model. It is expected that predictions using these structural parameters can be made for electrical properties. The approach may have wide use in understanding and designing nano-aggregates for electronic devices.

Hopping transport of positrons in hydrogenated amorphous silicon.

Positron beam timing spectroscopy has been used to investigate positron diffusion in hydrogenated amorphous silicon between 85 and 350 K. The diffusivity is determined from both the contribution of the surface, where the positrons have a different characteristic annihilation rate, and its effect on the shape of the bulk annihilation rate distribution. We observe a single positron state with a temperature independent lifetime of 322 ps. From the temperature dependence of the positron diffusion we show that this is a localized state and present the first ever direct observation of hopping diffusion of positrons in solids. The migration enthalpy for positrons in this state is found to be 17.7(3) meV.