The influence of internal charge transfer on nonradiative decay in substituted terthiophenes.

Photophysical data for a series of end substitued 3',4'-dibutyl-2,2':5',2''-terthiophenes are reported. Static absorption and fluorescence, quantum yields, time-resolved fluorescence, and time- and frequency-resolved pump-probe spectra are applied to investigate excited state relaxation in bromo, nitro, and tricyanovinyl substituted species in a variety of solvents. The effect of solvent polarizability and end-group substitution is discussed in the context of charge transfer in the excited state and its impact on nonradiative decay rates. In solution at room temperature, both symmetric and asymmetric addition of electron withdrawing end groups generate an excited state with substantial charge transfer character. Solvent polarizability has a significant influence on the excited state dynamics in the charge transfer compounds. Examples include a 20-fold reduction in the intersystem crossing rate going from hexane to toluene and an order of magnitude increase in the internal conversion rate between toluene and acetone. The results demonstrate that the impact of the substituents on intramolecular charge transfer, and the resulting amplification of the interactions between the excited state(s) and the local molecular environment, can dramatically change the excited state relaxation dynamics in substituted terthiophenes.

Reverse selectivity in m-CPBA oxidation of oligothiophenes to sulfones.

Oligothiophene sulfones of up to six rings can be conveniently prepared by the direct oxidation of butyl-substituted thiophene oligomers with m-CPBA in dichloromethane. Reverse selectivity of oxidized rings is observed relative to previously reported systems without beta-substitution. The selectivity in the trimer and hexamer is confirmed with single-crystal X-ray structure data. The sulfones possess red-shifted absorptions and increased electron affinities relative to the parent oligomers.

N- and P-channel transport behavior in thin film transistors based on tricyanovinyl-capped oligothiophenes.

We report the structural and electrical characterization of thin films of organic semiconductor molecules consisting of an oligothiophene core capped with electron-withdrawing tricyanovinyl (TCV) groups. X-ray diffraction and atomic force microscopy of evaporated films of three different TCV-capped oligothiophenes showed that the films were highly crystalline. Electrical transport was measured in thin film transistors employing silver source and drain contacts and channel probes to correct for contact resistance. Three compounds exhibited n-channel (electron) conduction consistent with cyclic voltametry data that indicated they undergo facile reduction. Maximum electron mobilities were 0.02 cm2/V.s with an on/off current ratio of 10(6). A fourth end-capped molecule, TCV-6T-TCV, which had six thiophene rings, exhibited both p- and n-channel transport. Overall, these results confirm that substitution of oligothiophene cores with electron-withdrawing groups is a useful strategy to achieve electron-transporting materials.

Synthesis and characterization of tricyanovinyl-capped oligothiophenes as low-band-gap organic materials.

Tricyanovinyl-capped oligothiophenes of up to six rings have been synthesized and characterized. The substituted oligomers display dramatic reductions in both their optical and electrochemical band gaps in comparison to unsubstituted oligomers. The solvatochromic behavior of the terthiophene-substituted molecule was investigated in a variety of solvents. Stable oxidations and reductions were exhibited by the sexithiophene-substituted molecule on the CV time scale. [structure: see text]

Exploration of ground and excited electronic states of aromatic and quinoid S,S-dioxide terthiophenes. Complementary systems for enhanced electronic organic materials.

We analyze the electronic and molecular structures for the ground and excited electronic states of aromatic terthiophene (3T), the quinodimethane 3',4'-dibutyl-5,5' '-bis(dicyanomethylene)-5,5' '-dihydro-2,2':5',2' '-terthiophene (3Q), and isologues with the middle ring S-oxidized (3TO2, 3QO2). These represent extremes of electron rich and deficient ground states, often exhibiting complementary properties. Oxidizing the central sulfur atom affects the molecular structure, electron affinity, and photophysical properties of both pi systems. The consequences for 3T include de-aromatization of the central thiophene, red-shifting of the electronic absorption spectrum, and lowering of the reduction potential. The electron deficient quinoid 3QO2 shows an enhancement of electron affinity from reducing the electron-donor ability of sulfur, and a blue-shifting of its electronic absorption spectrum was seen. Fluorescence emission is quenched in the sulfonated terthiophene, and the contrary effect again would be expected upon sulfonation of a quinoid emitter. Raman vibrational spectroscopy, electrochemistry, and UV-vis and fluorescence spectroscopies are analyzed in conjunction with theoretical calculations.

Preparation and characterization of pi-stacking quinodimethane oligothiophenes. Predicting semiconductor behavior and bandwidths from crystal structures and molecular orbital calculations.

A series of new quinodimethane-substituted terthiophene and quaterthiophene oligomers has been investigated for comparison with a previously studied quinoid oligothiophene that has demonstrated high mobilities and ambipolar transport behavior in thin-film transistor devices. Each new quinoidal thiophene derivative shows a reversible one-electron oxidation between 0.85 and 1.32 V, a quasi-reversible one-electron second oxidation between 1.37 and 1.96 V, and a reversible two-electron reduction between -0.05 and -0.23 V. The solution UV-vis-NIR spectrum of each compound is dominated by an intense (epsilon congruent with 100 000 M(-1) cm(-1)) low energy pi-pi transition that has a lambda(max) ranging between 648 and 790 nm. All X-ray crystal structures exhibit very planar quinoidal backbones and short intermolecular pi-stacking distances (3.335-3.492 A). Structures exhibit a single pi-stacking distance with parallel cofacial stacking (sulfur atoms of equivalent rings pointed in the same direction) or with alternating distances and antiparallel cofacial stacking (sulfur atoms of equivalent rings pointed in the opposite direction). Examples of the layered and herringbone-packing motifs are observed for both the parallel and the antiparallel cofacial stacking. Analysis of the X-ray structures and molecular orbital calculations indicates that all of these compounds have one-dimensional electronic band structures as a result of the pi-stacking. For structures with a unique pi-stacking distance, a simple geometric overlap parameter calculated from the shape of the molecule and the slip from perfect registry in the pi-stack correlates well with the transfer integrals (t) calculated using molecular orbital theory. The calculated valence (633 meV) and conduction (834 meV) bandwidths for a quinoid quaterthiophene structure are similar to those calculated for the benchmark pentacene and indicate that both hole and electron mobilities could be significant.