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1.
ACS Appl Mater Interfaces ; 10(9): 8132-8140, 2018 Mar 07.
Artigo em Inglês | MEDLINE | ID: mdl-29411962

RESUMO

Vertical crossbar devices based on manganite and cobalt injecting electrodes and a metal-quinoline molecular transport layer are known to manifest both magnetoresistance (MR) and electrical bistability. The two effects are strongly interwoven, inspiring new device applications such as electrical control of the MR and magnetic modulation of bistability. To explain the device functionality, we identify the mechanism responsible for electrical switching by associating the electrical conductivity and the impedance behavior with the chemical states of buried layers obtained by in operando photoelectron spectroscopy. These measurements revealed that a significant fraction of oxygen ions migrate under voltage application, resulting in a modification of the electronic properties of the organic material and of the oxidation state of the interfacial layer with the ferromagnetic contacts. Variable oxygen doping of the organic molecules represents the key element for correlating bistability and MR, and our measurements provide the first experimental evidence in favor of the impurity-driven model describing the spin transport in organic semiconductors in similar devices.

2.
Sci Rep ; 4: 7397, 2014 Dec 10.
Artigo em Inglês | MEDLINE | ID: mdl-25491921

RESUMO

The outgrowth formation in inorganic thin films is a dramatic problem that has limited the technological impact of many techniques and materials. Outgrowths are often themselves part of the films, but are detrimental for vertical junctions since they cause short-circuits or work as defects, compromising the reproducibility and in some cases the operation of the corresponding devices. The problem of outgrowth is particularly relevant in ablation-based methods and in some complex oxides, but is present in a large variety of systems and techniques. Here we propose an efficient local electrochemical method to selectively decompose the outgrowths of conductive oxide thin films by electrochemical decomposition, without altering the properties of the background film. The process is carried out using the same set-up as for local oxidation nanolithography, except for the sign of the voltage bias and it works at the nanoscale both as serial method using a scanning probe and as parallel method using conductive stamps. We demonstrated our process using La 0.7 Sr 0.3 MnO3 perovskite as a representative material but in principle it can be extended to many other conductive systems.

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