Active electrode IC for EEG and electrical impedance tomography with continuous monitoring of contact impedance.

The IC presented integrates the front-end for EEG and Electrical Impedance Tomography (EIT) acquisition on the electrode, together with electrode-skin contact impedance monitoring and EIT current generation, so as to improve signal quality and integration of the two techniques for brain imaging applications. The electrode size is less than 2 cm(2) and only 4 wires connect the electrode to the back-end. The readout circuit is based on a Differential Difference Amplifier and performs single-ended amplification and frequency division multiplexing of the three signals that are sent to the back-end on a single wire which also provides power supply. Since the system's CMRR is a function of each electrode's gain accuracy, an analysis is performed on how this is influenced by mismatches in passive and active components. The circuit is fabricated in 0.35 µm CMOS process and occupies 4 mm(2), the readout circuit consumes 360 µW, the input referred noise for bipolar EEG signal acquisition is 0.56 µVRMS between 0.5 and 100 Hz and almost halves if only EEG signal is acquired.

Electrode contact impedance sensitivity to variations in geometry.

Electrode contact impedance is a crucial factor in physiological measurements and can be an accuracy-limiting factor when performing electroencephalography and electrical impedance tomography. In this work, standard flat electrodes and micromachined multipoint spiked electrodes are characterized with a finite-element method electromagnetic solver and the dependence of the contact impedance on geometrical factors is explored. It is found that flat electrodes are sensitive to changes in the outer skin layer properties related to hydration and thickness, while spike electrodes are not. The impedance as a function of the effective contact area, number of spikes and penetration depth has also been studied and characterized.