All-Electrical 9-Bit Skyrmion-Based Racetrack Memory Designed with Laser Irradiation.

Racetrack memories with magnetic skyrmions have recently been proposed as a promising storage technology. To be appealing, several challenges must still be faced for the deterministic generation of skyrmions, their high-fidelity transfer, and accurate reading. Here, we realize the first proof-of-concept of a 9-bit skyrmion racetrack memory with all-electrical controllable functionalities implemented in the same device. The key ingredient is the generation of a tailored nonuniform distribution of magnetic anisotropy via laser irradiation in order to (i) create a well-defined skyrmion nucleation center, (ii) define the memory cells hosting the information coded as the presence/absence of skyrmions, and (iii) improve the signal-to-noise ratio of anomalous Hall resistance measurements. This work introduces a strategy to unify previous findings and predictions for the development of a generation of racetrack memories with robust control of skyrmion nucleation and position, as well as effective skyrmion electrical detection.

Ultra-sensitive voltage-controlled skyrmion-based spintronic diode.

We have designed a passive spintronic diode based on a single skyrmion stabilized in a magnetic tunnel junction and studied its dynamics induced by voltage-controlled magnetic anisotropy (VCMA) and Dzyaloshinskii-Moriya interaction (VDMI). We have demonstrated that the sensitivity (rectified output voltage over input microwave power) with realistic physical parameters and geometry can be larger than 10 kV W-1which is one order of magnitude larger than diodes employing a uniform ferromagnetic state. Our numerical and analytical results on the VCMA and VDMI-driven resonant excitation of skyrmions beyond the linear regime reveal a frequency dependence on the amplitude and no efficient parametric resonance. Skyrmions with a smaller radius produced higher sensitivities, demonstrating the efficient scalability of skyrmion-based spintronic diodes. These results pave the way for designing passive ultra-sensitive and energy efficient skyrmion-based microwave detectors.

Antiferromagnetic interlayer exchange coupled Co68B32/Ir/Pt multilayers.

Synthetic antiferromagnetic structures can exhibit the advantages of high velocity similarly to antiferromagnets with the additional benefit of being imaged and read-out through techniques applied to ferromagnets. Here, we explore the potential and limits of synthetic antiferromagnets to uncover ways to harness their valuable properties for applications. Two synthetic antiferromagnetic systems have been engineered and systematically investigated to provide an informed basis for creating devices with maximum potential for data storage, logic devices, and skyrmion racetrack memories. The two systems considered are (system 1) CoB/Ir/Pt of N repetitions with Ir inducing the negative coupling between the ferromagnetic layers and (system 2) two ferromagnetically coupled multilayers of CoB/Ir/Pt, coupled together antiferromagnetically with an Ir layer. From the hysteresis, it is found that system 1 shows stable antiferromagnetic interlayer exchange coupling between each magnetic layer up to N = 7. Using Kerr imaging, the two ferromagnetic multilayers in system 2 are shown to undergo separate maze-like switches during hysteresis. Both systems are also studied as a function of temperature and show different behaviors. Micromagnetic simulations predict that in both systems the skyrmion Hall angle is suppressed with the skyrmion velocity five times higher in system 1 than system 2.

Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance.

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here are shown three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn3, sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.

Nonlinear amplification of microwave signals in spin-torque oscillators.

Spintronics-based microwave devices, such as oscillators and detectors, have been the subject of intensive investigation in recent years owing to the potential reductions in size and power consumption. However, only a few concepts for spintronic amplifiers have been proposed, typically requiring complex device configurations or material stacks. Here, we demonstrate a spintronic amplifier based on two-terminal magnetic tunnel junctions (MTJs) produced with CMOS-compatible material stacks that have already been used for spin-transfer torque memories. We achieve a record gain (|S11 | > 2) for input power on the order of nW (<-40 dBm) at an appropriate choice of the bias field direction and amplitude. Based on micromagnetic simulations and experiments, we describe the fundamental aspects driving the amplification and show the key role of the co-existence in microwave emissions of a dynamic state of the MTJ excited by a dc current and the injection locking mode driven by the microwave input signal. Our work provides a way to develop a class of compact amplifiers that can impact the design of the next generation of spintronics-CMOS hybrid systems.

Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient.

Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we report bias-field-free SOT switching in a single perpendicular CoTb layer with an engineered vertical composition gradient. The vertical structural inversion asymmetry induces strong intrinsic SOTs and a gradient-driven Dzyaloshinskii-Moriya interaction (g-DMI), which breaks the in-plane symmetry during the switching process. Micromagnetic simulations are in agreement with experimental results, and elucidate the role of g-DMI in the deterministic switching processes. This bias-field-free switching scheme for perpendicular ferrimagnets with g-DMI provides a strategy for efficient and compact SOT device design.

Anatomy of Skyrmionic Textures in Magnetic Multilayers.

Room temperature magnetic skyrmions in magnetic multilayers are considered as information carriers for future spintronic applications. Currently, a detailed understanding of the skyrmion stabilization mechanisms is still lacking in these systems. To gain more insight, it is first and foremost essential to determine the full real-space spin configuration. Here, two advanced X-ray techniques are applied, based on magnetic circular dichroism, to investigate the spin textures of skyrmions in [Ta/CoFeB/MgO]n multilayers. First, by using ptychography, a high-resolution diffraction imaging technique, the 2D out-of-plane spin profile of skyrmions with a spatial resolution of 10 nm is determined. Second, by performing circular dichroism in resonant elastic X-ray scattering, it is demonstrated that the chirality of the magnetic structure undergoes a depth-dependent evolution. This suggests that the skyrmion structure is a complex 3D structure rather than an identical planar texture throughout the layer stack. The analyses of the spin textures confirm the theoretical predictions that the dipole-dipole interactions together with the external magnetic field play an important role in stabilizing sub-100 nm diameter skyrmions and the hybrid structure of the skyrmion domain wall. This combined X-ray-based approach opens the door for in-depth studies of magnetic skyrmion systems, which allows for precise engineering of optimized skyrmion heterostructures.

Observation of Magnetic Radial Vortex Nucleation in a Multilayer Stack with Tunable Anisotropy.

Recently discovered exotic magnetic configurations, namely magnetic solitons appearing in the presence of bulk or interfacial Dzyaloshinskii-Moriya Interaction (i-DMI), have excited scientists to explore their potential applications in emerging spintronic technologies such as race-track magnetic memory, spin logic, radio frequency nano-oscillators and sensors. Such studies are motivated by their foreseeable advantages over conventional micro-magnetic structures due to their small size, topological stability and easy spin-torque driven manipulation with much lower threshold current densities giving way to improved storage capacity, and faster operation with efficient use of energy. In this work, we show that in the presence of i-DMI in Pt/CoFeB/Ti multilayers by tuning the magnetic anisotropy (both in-plane and perpendicular-to-plane) via interface engineering and postproduction treatments, we can stabilize a variety of magnetic configurations such as Néel skyrmions, horseshoes and most importantly, the recently predicted isolated radial vortices at room temperature and under zero bias field. Especially, the radial vortex state with its absolute convergence to or divergence from a single point can potentially offer exciting new applications such as particle trapping/detrapping in addition to magnetoresistive memories with efficient switching, where the radial vortex state can act as a source of spin-polarized current with radial polarization.

Excitation of propagating spin waves in ferromagnetic nanowires by microwave voltage-controlled magnetic anisotropy.

The voltage-controlled magnetic anisotropy (VCMA) effect, which manifests itself as variation of anisotropy of a thin layer of a conductive ferromagnet on a dielectric substrate under the influence of an external electric voltage, can be used for the development of novel information storage and signal processing devices with low power consumption. Here it is demonstrated by micromagnetic simulations that the application of a microwave voltage to a nanosized VCMA gate in an ultrathin ferromagnetic nanowire results in the parametric excitation of a propagating spin wave, which could serve as a carrier of information. The frequency of the excited spin wave is twice smaller than the frequency of the applied voltage while its amplitude is limited by 2 mechanisms: (i) the so-called "phase mechanism" described by the Zakharov-L'vov-Starobinets "S-theory" and (ii) the saturation mechanism associated with the nonlinear frequency shift of the excited spin wave. The developed extension of the "S-theory", which takes into account the second limitation mechanism, allowed us to estimate theoretically the efficiency of the parametric excitation of spin waves by the VCMA effect.

Giant spin-torque diode sensitivity in the absence of bias magnetic field.

Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to apply a magnetic field. Here, we demonstrate nanoscale magnetic tunnel junction microwave detectors, exhibiting high-detection sensitivity of 75,400 mV mW(-1) at room temperature without any external bias fields, and for low-input power (micro-Watts or lower). This sensitivity is significantly larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes. Micromagnetic simulations and measurements reveal the essential role of injection locking to achieve this sensitivity performance. This mechanism may provide a pathway to enable further performance improvement of spin-torque diode microwave detectors.

Topological, non-topological and instanton droplets driven by spin-transfer torque in materials with perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya Interaction.

The interfacial Dzyaloshinskii-Moriya Interaction can modify the topology of droplets excited by a localized spin-polarized current. Here, we show that, in addition to the stationary droplet excitations with skyrmion number either one (topological) or zero (non-topological), there exists, for a fixed current, an excited mode with a non-stationary time behavior. We call this mode "instanton droplet", which is characterized by time domain transitions of the skyrmion number. These transitions are coupled to an emission of incoherent spin-waves that can be observed in the frequency domain as a source of noise. Our results are interesting from a fundamental point of view to study spin-wave emissions due to a topological transition in current-driven systems, and could open the route for experiments based on magnetoresistance effect for the design of a further generation of nanoscale microwave oscillators.