Novel and Extremely Sensitive NiAl2O4-NiO Nanostructures on an ITO Sensing Electrode for Enhanced Detection of Ascorbic Acid.

The current study focused on the design of an extremely sensitive electrochemical sensor of ascorbic acid based on a mixture of NiAl2O4-NiO nanoparticles that, produced in a single step using the sol-gel method, on an ITO electrode. This new sensing platform is useful for the detection of ascorbic acid with a wide range of concentrations extending from the attomolar to the molar. SEM micrographs show the porous structure of the NiAl2O4-NiO sample, with a high specific surface area, which is beneficial for the catalytic performance of the nanocomposite. An XRD diffractogram confirmed the existence of two phases, NiAl2O4 and NiO, both corresponding to the face-centred cubic crystal structure. The performances of the modified electrode, as a biomolecule, in the detection of ascorbic acid was evaluated electrochemically by cyclic voltammetry and chronoamperometry. The sensor exhibited a sensitive electrocatalytic response at a working potential of E = +0.3 V vs. Ag/Ag Cl, reaching a steady-state current within 30 s after each addition of ascorbic acid solution with a wide dynamic range of concentrations extending from attolevels (10-18 M) to molar (10 mM) and limits of detection and quantification of 1.2 × 10-18 M and 3.96 × 10-18 M, respectively. This detection device was tested for the quantification of ascorbic acid in a 500 mg vitamin C commercialized tablet that was not pre-treated.

Structural and Spectroscopic Studies of NaCuCr2(PO4)3: A Noncentrosymmetric Phosphate Belonging to the α-CrPO4-Type Compounds.

An electron and joint neutron and X-ray diffraction study of the synthetic copper/chromium phosphate NaCuCr2(PO4)3 (NaCuP) is reported. A noncentrosymmetric Imm2 space group belonging to the well-known α-CrPO4 type is observed contrary to what is reported in NaMCr2(PO4)3 (M = Co and Ni) phosphates. The structural model is validated by bond valence sum analysis and charge-distribution (CHARDI) calculations and supported by complementary infrared and Raman spectroscopy investigations. Both Raman spectroscopy and theoretical study by deformation density approach further suggest the presence of Cu2+ (3d9) and Cr2+ (3d4) Jahn-Teller polaron effects as a key factor to the centro Imma to noncentrosymmetric Imm2 phase change.

Non-Enzymatic Glucose Sensing Using Carbon Quantum Dots Decorated with Copper Oxide Nanoparticles.

Perturbations in glucose homeostasis is critical for human health, as hyperglycemia (defining diabetes) leads to premature death caused by macrovascular and microvascular complications. However, the simple and accurate detection of glucose in the blood at low cost remains a challenging task, although it is of great importance for the diagnosis and therapy of diabetic patients. In this work, carbon quantum dots decorated with copper oxide nanostructures (CQDs/Cu2O) are prepared by a simple hydrothermal approach, and their potential for electrochemical non-enzymatic glucose sensing is evaluated. The proposed sensor exhibits excellent electrocatalytic activity towards glucose oxidation in alkaline solutions. The glucose sensor is characterized by a wide concentration range from 6 µM to 6 mM, a sensitivity of 2.9 ± 0.2 µA·µM-1·cm-2, and a detection limit of 6 µM at a signal-to-noise ratio S/N = 3. The sensors are successfully applied for glucose determination in human serum samples, demonstrating that the CQDs/Cu2O-based glucose sensor satisfies the requirements of complex sample detection with adapted potential for therapeutic diagnostics.

Hydrothermal synthesis of Ag-doped ZnO/sepiolite nanostructured material for enhanced photocatalytic activity.

This work is devoted to the development of Ag-ZnO/sepiolite photocatalysts as novel nanostructured materials by the immobilization of Ag-doped ZnO on the surface of fibrous clay. Herein, innovative Ag-ZnO/sepiolite photocatalysts were successfully prepared through a simple hydrothermal route using diverse Ag dopant concentrations (2 and 5%). Structural, morphological, and optical properties of the obtained photocatalysts were characterized by XRD, TEM, MEB, and DRS-UV-Vis spectroscopy. The results confirmed that Ag-doped ZnO nanoparticles with a diameter of 10-30 nm are homogeneously distributed on the sepiolite fibers' surface. The silver dopant was effectively incorporated into the zinc oxide, leading to a slight distortion of the hexagonal wurtzite structure and a reduction of the bandgap energy with increased silver doping. The photocatalytic activity towards the degradation of methylene blue (MB) dye was analyzed for all the samples under UV-Vis light. Compared to ZnO alone and undoped ZnO/SEP, the Ag-ZnO/SEP5% nanostructured materials exhibited a significantly improved photocatalytic activity, with full decolorization after 4 h of UV-Vis irradiation (60 W). The photocatalysis of organic pollutants matched well with a pseudo-first-order kinetic. The enhanced photocatalytic activity was ascribed to the low bandgap energy (3 eV), the reduction of the recombination of electron hole, and the sepiolite support.

Efficient Diode Performance with Improved Effective Carrier Lifetime and Absorption Using Bismuth Nanoparticles Passivated Silicon Nanowires.

In this paper, we report a novel design of bismuth nanoparticle-passivated silicon nanowire (Bi@SiNW) heterojunction composites for high diode performances and improved effective carrier lifetime and absorption properties. High-density vertically aligned SiNWs were fabricated using a simple and cost-effective silver-assisted chemical etching method. Bi nanoparticles (BiNPs) were then anchored in these nanowires by a straightforward thermal evaporation technique. The systematic study of the morphology, elemental composition, structure, and crystallinity provided evidence for the synergistic effect between SiNWs and BiNPs. Bi@SiNWs exhibited an eight-fold enhancement of the first-order Raman scattering compared to bare silicon. Current-voltage characteristics highlighted that bismuth treatment dramatically improved the rectifying behavior and diode parameters for Bi-passivated devices over Bi-free devices. Significantly, Bi wire-filling effectively increased the minority carrier lifetime and consequently reduced the surface recombination velocity, further indicating the benign role of Bi as a surface passivation coating. Furthermore, the near-perfect absorption property of up to 97% was achieved. The findings showed that a judicious amount of Bi coating is required. In this study the reasons behind the superior improvement in Bi@SiNW's overall properties were elucidated thoroughly. Thus, Bi@SiNW heterojunction nanocomposites could be introduced as a promising and versatile candidate for nanoelectronics, photovoltaics and optoelectronics.

Enhanced Photocatalytic Activity and Photoluminescence of ZnO Nano-Wires Coupled with Aluminum Nanostructures.

In this study, we fabricated a hybrid plasmonic/semiconductor material by combining the chemical bath deposition of zinc oxide nanowires (ZnONWs) with the physical vapor deposition of aluminum nanostructures (AlNSs) under controlled temperature and atmosphere. The morphological and the optical properties of the ZnONWs/AlNSs hybrid material fabricated at different temperatures (250, 350, and 450 °C) and thicknesses (5, 7, and 9 nm) of Al layers were investigated. By adjusting the deposition and annealing parameters, it was possible to tune the size distribution of the AlNSs. The resonant coupling between the plasmonic AlNSs and ZnONWs leads to an enhanced photoluminescence response. The photocatalytic activity was studied through photodegradation under UV-light irradiation of methylene blue (MB) adsorbed at the surface of ZnO. The MB photodegradation experiment reveals that the ZnONWs covered with 7 nm aluminum film and annealed at 450 °C exhibit the highest degradation efficiency. The comparison between ZnONws and ZnONws/AlNSs shows a photoluminescence enhancement factor of 1.7 and an increase in the kinetics constant of photodegradation with a factor of 4.

A facile approach for the synthesis of porous hematite and magnetite nanoparticles through sol-gel self-combustion.

Porous magnetite (Fe3O4) and hematite (α-Fe2O3) nanoparticles were prepared via the sol-gel auto-combustion method. The gels were prepared by reacting ferric nitrates (as oxidants) with starch (as fuel) at an elevated temperature of 200 °C. Different ratios (Φ) of ferric nitrates to starch were used for the synthesis (Φ = fuel/oxidant). The synthesized iron oxides were characterized by Fourier transform infrared (FT-IR) spectroscopy, Raman spectroscopy, X-ray diffraction (XRD) spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), Brunauer-Emmet-Teller (BET) and vibrating sample magnetometer (VSM) analysis techniques. The crystal structure, morphology, and specific surface area of the iron oxide nanoparticles (Fe3O4 and α-Fe2O3) were found to be dependent on the starch content. The FT-IR, XRD and VSM analysis of the iron oxides for Φ = 0.3 and 0.7 confirmed the formation of the α-Fe2O3 core, whereas at Φ = 1, 1.7, and 2 showed that Fe3O4 cores were formed with the highest saturation magnetization of 60.36 emu/g at Φ = 1. The morphology of the Fe3O4 nanoparticles exhibited a quasi-spherical shape, while α-Fe2O3 nanoparticles appeared polygonal and formed clusters. The highest specific surface area was found to be 48 m2 g-1 for Φ = 1.7 owing to the rapid thermal decomposition process. Type II and type III isotherms indicated mesoporous structures.

Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures.

A key requirement for the development of highly efficient silicon nanowires (SiNWs) for use in various kinds of cutting-edge applications is the outstanding passivation of their surfaces. In this vein, we report on a superior passivation of a SiNWs surface by bismuth nano-coating (BiNC) for the first time. A metal-assisted chemical etching technique was used to produce the SiNW arrays, while the BiNCs were anchored on the NWs through thermal evaporation. The systematic studies by Scanning Electron Microscopy (SEM), energy dispersive X-ray spectra (EDX), and Fourier Transform Infra-Red (FTIR) spectroscopies highlight the successful decoration of SiNWs by BiNC. The photoluminescence (PL) emission properties of the samples were studied in the visible and near-infrared (NIR) spectral range. Interestingly, nine-fold visible PL enhancement and NIR broadband emission were recorded for the Bi-modified SiNWs. To our best knowledge, this is the first observation of NIR luminescence from Bi-coated SiNWs (Bi@SiNWs), and thus sheds light on a new family of Bi-doped materials operating in the NIR and covering the important telecommunication wavelengths. Excellent anti-reflectance abilities of ~10% and 8% are observed for pure SiNWs and Bi@SiNWs, respectively, as compared to the Si wafer (50-90%). A large decrease in the recombination activities is also obtained from Bi@SiNWs heterostructures. The reasons behind the superior improvement of the Bi@SiNWs performance are discussed in detail. The findings demonstrate the effectiveness of Bi as a novel surface passivation coating, where Bi@SiNWs heterostructures are very promising and multifunctional for photovoltaics, optoelectronics, and telecommunications.

Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires.

In this work, vertically aligned silicon nanowires (SiNWs) with relatively high crystallinity have been fabricated through a facile, reliable, and cost-effective metal assisted chemical etching method. After introducing an itemized elucidation of the fabrication process, the effect of varying etching time on morphological, structural, optical, and electrical properties of SiNWs was analysed. The NWs length increased with increasing etching time, whereas the wires filling ratio decreased. The broadband photoluminescence (PL) emission was originated from self-generated silicon nanocrystallites (SiNCs) and their size were derived through an analytical model. FTIR spectroscopy confirms that the PL deterioration for extended time is owing to the restriction of excitation volume and therefore reduction of effective light-emitting crystallites. These SiNWs are very effective in reducing the reflectance to 9-15% in comparison with Si wafer. I-V characteristics revealed that the rectifying behaviour and the diode parameters calculated from conventional thermionic emission and Cheung's model depend on the geometry of SiNWs. We deduce that judicious control of etching time or otherwise SiNWs' length is the key to ensure better optical and electrical properties of SiNWs. Our findings demonstrate that shorter SiNWs are much more optically and electrically active which is auspicious for the use in optoelectronic devices and solar cells applications.