Phosphor-in-glass with Nd-doped glass for a white LED with a wide color gamut.

A phosphor-in-glass (PiG) with red and green phosphors using Nd-doped glass as a host matrix was fabricated to produce a white light emitting diode (wLED) with a wide color gamut. The Lu3Al5O12:Ce3+ and CaAlSiN3:Eu2+ contents were adjusted to achieve white emission for liquid crystal display (LCD) applications. The silicate glass was doped with varying concentrations of Nd2O3 to modify the photoluminescence spectra of the wLED, by the hypersensitive absorption of the Nd3+:I9/24→G5/24,G27/2 transition. The color coordination, the color rendering index, and the color co-related temperature of the PiG-mounted LEDs were modified by the introduction of Nd3+. The color gamut of the wLED was monitored and found to have effectively improved with the Nd3+-doped silicate glass.

A Phosphosilicate Compound, NaCa3PSiO8: Structure Solution and Luminescence Properties.

NaCa3PSiO8 was synthesized in a microwave-assisted solid-state reaction. The crystal structure of the synthesized compound was solved using a least-squares method, followed by simulated annealing. The compound was crystallized in the orthorhombic space group Pna21, belonging to Laue class mmm. The structure consisted of two layers of cation planes, each of which contained three cation channels. The cation channels in each of the layers ran antiparallel to that of the adjacent layer. All the major cations together constituted four distinct crystallographic sites. The Rietveld refinement of the powder X-ray diffraction data, followed by the maximum-entropy method analysis, confirmed the obtained structure solutions. The electronic band structure of the compound was analyzed through density function theory calculations. Luminescence properties of the compound, upon activating with Eu2+ ions, were analyzed through photoluminescence measurements and decay profile analysis. The compound was found to exhibit green luminescence centered at ∼502 nm, with a typical broadband emission due to the transition from the crystal-field split 4f65d to 4f7 levels.

Highly improved reliability of amber light emitting diode with Ca -α-SiAlON phosphor in glass formed by gas pressure sintering for automotive applications.

Phosphor in glass (PiG) with 40 wt% of Ca-α-SiAlON phosphor and 60 wt% of Pb-free silicate glass was synthesized and mounted on a high-power blue LED to make an amber LED for automotive applications. Gas pressure sintering was applied after the conventional sintering process was used to achieve fully dense PiG plates. Changes in photoluminescence spectra and color coordination were inspected by varying the thickness of the plates that were mounted after optical polishing and machining. A trade-off between luminous flux and color purity was observed. The commercial feasibility of amber PiG packaged LED, which can satisfy international regulations for automotive components, was successfully demonstrated by examining the practical reliability under 85% humidity at an 85°C condition.

Control of chromaticity by phosphor in glasses with low temperature sintered silicate glasses for LED applications.

Phosphor-in-glass (PiG) color converters for LED applications were fabricated with a mixture of phosphors, Y3Al5O12:Ce³âº (yellow) and CaAlSiN3:Eu²âº (red). The low sintering temperature (550°C) of SiO2-Na2O-RO (R=Ba, Zn) glass powder enabled the inclusion of CaAlSiN3:Eu²âº (red) phosphor which cannot be embedded with conventional glass powders for PiGs. By simply varying the mixing ratio of glass to phosphors as well as the ratio of yellow to red phosphors, the facile control of the CIE chromaticity coordinates and correlated color temperature of the LED following the Planckian locus has been achieved. Phosphors were well distributed within the glass matrix without noticeable reactions, preserving the enhanced thermal quenching property of the PiG compared to those with silicone resins, for LEDs.

Preparation of electrospun pyrochlore-structure KGdTa2O7:Eu3+ phosphor: the optical and structural properties for white light emitting diode applications.

Red emitting nanofibers, KGdTa2O7:Eu3+ were synthesized by electrospinning technique followed by heat treatment. As-prepared uniform fiber precursor with diameter ranging from about 700 nm to about 900 nm were calcined after removing organic species by calcination. The fiber surface become rough and diameter decreased to about 250-340 nm range due to decomposition of organic species and formation of inorganic phase. Morphology, structural and photoluminescent properties of fibers were analyzed using thermogravimetric and differential thermal analysis (TG-DTA), X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence (PL). TG-DTA analysis indicates that KGdTa2O7:Eu3+ began to crystalize at 520 degrees C. Fibers annealed at 900 degrees C formed well crystallized uniform fibers. Under ultraviolet excitation KGdTa2O7:Eu3+ exhibits red emission due to transitions in 4f states of Eu3+. The excitation band is dominated by the Eu(3+)--O2-charge transfer band peaked at 289 nm. The emission peak is in the region that is ideal for red light emission.

Low-temperature growth of MoS2 on polymer and thin glass substrates for flexible electronics.

Recent advances in two-dimensional semiconductors, particularly molybdenum disulfide (MoS2), have enabled the fabrication of flexible electronic devices with outstanding mechanical flexibility. Previous approaches typically involved the synthesis of MoS2 on a rigid substrate at a high temperature followed by the transfer to a flexible substrate onto which the device is fabricated. A recurring drawback with this methodology is the fact that flexible substrates have a lower melting temperature than the MoS2 growth process, and that the transfer process degrades the electronic properties of MoS2. Here we report a strategy for directly synthesizing high-quality and high-crystallinity MoS2 monolayers on polymers and ultrathin glass substrates (thickness ~30 µm) at ~150 °C using metal-organic chemical vapour deposition. By avoiding the transfer process, the MoS2 quality is preserved. On flexible field-effect transistors, we achieve a mobility of 9.1 cm2 V-1 s-1 and a positive threshold voltage of +5 V, which is essential for reducing device power consumption. Moreover, under bending conditions, our logic circuits exhibit stable operation while phototransistors can detect light over a wide range of wavelengths from 405 nm to 904 nm.

Phosphor in glasses with Pb-free silicate glass powders as robust color-converting materials for white LED applications.

Phosphor-in-glass (PiG) typed robust color converters were fabricated using Pb-free silicate glasses for high-power white LED applications. SiO2-B2O3-RO(R=Ba,Zn) glass powder showed good sintering behavior and high visible transparency under the sintering condition of 750 °C for 30 min without noticeable interaction with phosphors. By simply changing the thickness of the PiG plate or mixing ratio of glass to Y3Al5O12:Ce3+ phosphor, CIE chromaticity coordinates of the LED can be easily controlled. Enhanced thermal quenching property of PiG compared to phosphor with conventional silicone resin suggests its prominent feasibility for high-power/high-brightness white LEDs.

A complete inorganic colour converter based on quantum-dot-embedded silicate glasses for white light-emitting-diodes.

A complete inorganic quantum dot color converter for a white LED is achieved using silicate-based quantum-dot-embedded glasses (QDEGs). The white LED exhibits a high CRI of 90 and highly improved thermal stability up to 200 °C, demonstrating its robustness and practicality. The CdSe/CdS core/shell structure within the silicate glass is expected to enhance the colour converting efficiency.