Memristive effects in oxygenated amorphous carbon nanodevices.

Computing with resistive-switching (memristive) memory devices has shown much recent progress and offers an attractive route to circumvent the von-Neumann bottleneck, i.e. the separation of processing and memory, which limits the performance of conventional computer architectures. Due to their good scalability and nanosecond switching speeds, carbon-based resistive-switching memory devices could play an important role in this respect. However, devices based on elemental carbon, such as tetrahedral amorphous carbon or ta-C, typically suffer from a low cycling endurance. A material that has proven to be capable of combining the advantages of elemental carbon-based memories with simple fabrication methods and good endurance performance for binary memory applications is oxygenated amorphous carbon, or a-CO x . Here, we examine the memristive capabilities of nanoscale a-CO x devices, in particular their ability to provide the multilevel and accumulation properties that underpin computing type applications. We show the successful operation of nanoscale a-CO x memory cells for both the storage of multilevel states (here 3-level) and for the provision of an arithmetic accumulator. We implement a base-16, or hexadecimal, accumulator and show how such a device can carry out hexadecimal arithmetic and simultaneously store the computed result in the self-same a-CO x cell, all using fast (sub-10 ns) and low-energy (sub-pJ) input pulses.

Laser-writable high-k dielectric for van der Waals nanoelectronics.

Similar to silicon-based semiconductor devices, van der Waals heterostructures require integration with high-k oxides. Here, we demonstrate a method to embed and pattern a multifunctional few-nanometer-thick high-k oxide within various van der Waals devices without degrading the properties of the neighboring two-dimensional materials. This transformation allows for the creation of several fundamental nanoelectronic and optoelectronic devices, including flexible Schottky barrier field-effect transistors, dual-gated graphene transistors, and vertical light-emitting/detecting tunneling transistors. Furthermore, upon dielectric breakdown, electrically conductive filaments are formed. This filamentation process can be used to electrically contact encapsulated conductive materials. Careful control of the filamentation process also allows for reversible switching memories. This nondestructive embedding of a high-k oxide within complex van der Waals heterostructures could play an important role in future flexible multifunctional van der Waals devices.

New routes to the functionalization patterning and manufacture of graphene-based materials for biomedical applications.

Graphene-based materials are being widely explored for a range of biomedical applications, from targeted drug delivery to biosensing, bioimaging and use for antibacterial treatments, to name but a few. In many such applications, it is not graphene itself that is used as the active agent, but one of its chemically functionalized forms. The type of chemical species used for functionalization will play a key role in determining the utility of any graphene-based device in any particular biomedical application, because this determines to a large part its physical, chemical, electrical and optical interactions. However, other factors will also be important in determining the eventual uptake of graphene-based biomedical technologies, in particular the ease and cost of manufacture of proposed device and system designs. In this work, we describe three novel routes for the chemical functionalization of graphene using oxygen, iron chloride and fluorine. We also introduce novel in situ methods for controlling and patterning such functionalization on the micro- and nanoscales. Our approaches are readily transferable to large-scale manufacturing, potentially paving the way for the eventual cost-effective production of functionalized graphene-based materials, devices and systems for a range of important biomedical applications.

High Efficiency CVD Graphene-lead (Pb) Cooper Pair Splitter.

Generation and manipulation of quantum entangled electrons is an important concept in quantum mechanics, and necessary for advances in quantum information processing; but not yet established in solid state systems. A promising device is a superconductor-two quantum dots Cooper pair splitter. Early nanowire based devices, while efficient, are limited in scalability and further electron manipulation. We demonstrate an optimized, high efficiency, CVD grown graphene-based Cooper pair splitter. Our device is designed to induce superconductivity in graphene via the proximity effect, resulting in both a large superconducting gap Δ = 0.5 meV, and coherence length ξ = 200 nm. The flat nature of the device lowers parasitic capacitance, increasing charging energy EC. Our design also eases geometric restrictions and minimizes output channel separation. As a result we measure a visibility of up to 86% and a splitting efficiency of up to 62%. This will pave the way towards near unity efficiencies, long distance splitting, and post-splitting electron manipulation.

Transparent conductive graphene textile fibers.

Transparent and flexible electrodes are widely used on a variety of substrates such as plastics and glass. Yet, to date, transparent electrodes on a textile substrate have not been explored. The exceptional electrical, mechanical and optical properties of monolayer graphene make it highly attractive as a transparent electrode for applications in wearable electronics. Here, we report the transfer of monolayer graphene, grown by chemical vapor deposition on copper foil, to fibers commonly used by the textile industry. The graphene-coated fibers have a sheet resistance as low as ~1 kΩ per square, an equivalent value to the one obtained by the same transfer process onto a Si substrate, with a reduction of only 2.3 per cent in optical transparency while keeping high stability under mechanical stress. With this approach, we successfully achieved the first example of a textile electrode, flexible and truly embedded in a yarn.

Properties and applications of chemically functionalized graphene.

The vast and yet largely unexplored family of graphene materials has great potential for future electronic devices with novel functionalities. The ability to engineer the electrical and optical properties in graphene by chemically functionalizing it with a molecule or adatom is widening considerably the potential applications targeted by graphene. Indeed, functionalized graphene has been found to be the best known transparent conductor or a wide gap semiconductor. At the same time, understanding the mechanisms driving the functionalization of graphene with hydrogen is proving to be of fundamental interest for energy storage devices. Here we discuss recent advances on the properties and applications of chemically functionalized graphene.

Trilayer graphene is a semimetal with a gate-tunable band overlap.

Graphene-based materials are promising candidates for nanoelectronic devices because very high carrier mobilities can be achieved without the use of sophisticated material preparation techniques. However, the carrier mobilities reported for single-layer and bilayer graphene are still less than those reported for graphite crystals at low temperatures, and the optimum number of graphene layers for any given application is currently unclear, because the charge transport properties of samples containing three or more graphene layers have not yet been investigated systematically. Here, we study charge transport through trilayer graphene as a function of carrier density, temperature, and perpendicular electric field. We find that trilayer graphene is a semimetal with a resistivity that decreases with increasing electric field, a behaviour that is markedly different from that of single-layer and bilayer graphene. We show that the phenomenon originates from an overlap between the conduction and valence bands that can be controlled by an electric field, a property that had never previously been observed in any other semimetal. We also determine the effective mass of the charge carriers, and show that it accounts for a large part of the variation in the carrier mobility as the number of layers in the sample is varied.

Shot noise in ballistic graphene.

We have investigated shot noise in graphene field effect devices in the temperature range of 4.2-30 K at low frequency (f=600-850 MHz). We find that for our graphene samples with a large width over length ratio W/L, the Fano factor F reaches a maximum F ~ 1/3 at the Dirac point and that it decreases strongly with increasing charge density. For smaller W/L, the Fano factor at Dirac point is significantly lower. Our results are in good agreement with the theory describing that transport at the Dirac point in clean graphene arises from evanescent electronic states.