1.
Phys Rev Lett
; 110(8): 085502, 2013 Feb 22.
Artigo
em Inglês
| MEDLINE
| ID: mdl-23473163
RESUMO
The formation of R8 germanium is reported. The ß-Sn phase is first induced by the indentation of amorphous germanium (a-Ge) and the resultant phases on pressure release are characterized by Raman scattering. The expected Raman line frequencies for the various phases of Ge are determined from first-principles calculations using density functional perturbation theory of the zone-center phonons in the diamond, ST12, BC8, and R8 Ge phases. In addition to the R8 phase, traces of BC8 may also be present following pressure release.