Modulation of 1 MeV electron irradiation on ultraviolet response in MoS2FET.

The material, electrical and ultraviolet optoelectronic properties of few layers bottom molybdenum disulfide (MoS2) field effect transistors (FETs) device was investigated before and after 1 MeV electron irradiation. Due to the participation of SiO2in conduction, we discovered novel photoelectric properties and a relatively long photogenerated carrier lifetime (several tens of seconds). Electron irradiation causes lattice distortion, the decrease of carrier mobility, and the increase of interface state. It leads to the degradation of output characteristics, transfer characteristics and photocurrent of the MoS2FET.

Electron radiation effects on the structural and electrical properties of MoS2 field effect transistors.

The effects of space radiation on the structural and electrical properties of MoS2 field effect transistors (FETs) were investigated. The 1 MeV electronically equivalent International Space Station (ISS) track was used to apply fluence equivalent to the orbital for 10 (1.0 × 1012 cm-2) and 30 years (3.0 × 1012 cm-2) using the AP8 and AE8 models. X-ray photoelectron spectroscopy (XPS), Raman and photoluminescence (PL) spectra were recorded before and after irradiation. Electron irradiation produced strong desulfurization effects in MoS2 FETs. The PL spectra before and after irradiation did not change significantly, while the [Formula: see text] and A1g Raman modes were red- and blue-shifted, respectively. The XPS results demonstrated a strong desulfurization effect of the electron beam on MoS2. This reduction indicates a much higher amount of irradiation-induced S vacancies compared to Mo vacancies. The electrical characteristics of the device were measured before and after irradiation. The increase in the channel leakage current after irradiation was attributed to the oxide trapping positive charges. MoS2 FETs irradiated by the electron-beam demonstrated a decreased current. This phenomenon can be attributed to the combination of the states at the SiO2/MoS2 interfaces and Coulomb scattering. Our study provides a deeper understanding of the influence of 1 MeV electron-beam irradiation on MoS2-based nano-electronic devices for future space applications.

Modulation of electronic and optical properties by surface vacancies in low-dimensional ß-Ga2O3.

Calculations using the Heyd-Scuseria-Ernzerhof screened hybrid functional reveal the detailed influence that surface vacancies have on the electronic and optical properties of low-dimensional (LD) ß-Ga2O3. Vacancies manifest subtle changes to the electronic characteristics as oxygen states predominate the valence band at the surface. Dielectric functions at the surface are found to increase with vacancies and defects. A broad impact on optical properties, such as absorption coefficients, reflectivity, refractive indices, and electron loss, is seen with increased vacancy defects. Both visible and infrared regions show direct correlation with vacancies while there is a marked decrease in the deep ultraviolet (UV) region. These calculations on the ß-Ga2O3 model system may guide the rational design of two-dimensional optical devices with minimized van der Waals forces.

Study on the Microstructure of Polyether Ether Ketone Films Irradiated with 170 keV Protons by Grazing Incidence Small Angle X-ray Scattering (GISAXS) Technology.

Polyether ether ketone (PEEK) films irradiated with 170 keV protons were calculated by the stopping and ranges of ions in matter (SRIM) software. The results showed that the damage caused by 170 keV protons was only several microns of the PEEK surface, and the ionization absorbed dose and displacement absorbed dose were calculated. The surface morphology and roughness of PEEK after proton irradiation were studied by atomic force microscope (AFM). GISAXS was used to analyze the surface structural information of the pristine and irradiated PEEK. The experimental results showed that near the surface of the pristine and irradiated PEEK exists a peak, and the peak gradually disappeared with the increasing of the angles of incidence and the peak changed after irradiation, which implies the 170 keV protons have an effect on PEEK structure. The influences of PEEK irradiated with protons on the melting temperature and crystallization temperature was investigated by differential scanning calorimetry (DSC). The DSC results showed that the crystallinity of the polymer after irradiation decreased. The structure and content of free radicals of pristine and irradiated PEEK were studied by Fourier transform infrared spectroscopy (FTIR) and electron paramagnetic resonance (EPR). The stress and strain test results showed that the yield strength of the PEEK irradiated with 5 × 1015 p/cm2 and 1 × 1016 p/cm2 was higher than the pristine, but the elongation at break of the PEEK irradiated with 5 × 1015 p/cm2 and 1 × 1016 p/cm2 decreased obviously.

Low Dielectric Constant Polyimide Obtained by Four Kinds of Irradiation Sources.

Irradiation is a good modification technique, which can be used to modify the electrical properties, mechanical properties, and thermal properties of polymer materials. The effects of irradiation on the electrical properties, mechanical properties, and structure of polyimide (PI) films were studied. PI films were irradiated by a 1 MeV electron, 3 MeV proton, 10 MeV proton, and 25 MeV carbon ion. Dielectric constant, dielectric loss, and resistance measurements were carried out to evaluate the changes in the electrical properties; moreover, the mechanical properties of the pristine and irradiated PI were analyzed by the tensile testing system. The irradiation induced chemical bonds and free radicals changes of the PI films were confirmed by the Fourier transform infrared (FTIR) spectra, X-ray photoelectron spectroscopy (XPS), and electron paramagnetic resonance (EPR). The dielectric constant of the PI films decreases with the increase of fluences by the four kinds of irradiation sources.

Interaction between hydrogen and gallium vacancies in ß-Ga2O3.

In this paper, the revised Heyd-Scuseria-Ernzerhof screened hybrid functional (HSE06) is used to investigate the interaction between hydrogen with different concentrations and gallium vacancies in ß-Ga2O3. The hydrogen can compensate a gallium vacancy by forming hydrogen-vacancy complex. A gallium vacancy can bind up to four hydrogen atoms, and formation energies decrease as the number of hydrogen atoms increases. Hydrogen prefers to bind with three coordinated oxygen. The bonding energy and annealing temperatures of complexes containing more than two hydrogen atoms are computed, and show relatively high stability. In addition, vacancy concentrations increase with the increasing vapor pressures. This paper can effectively explain the hydrogen impact in ß-Ga2O3.