The Deep Eutectic Solvent Precipitation Synthesis of Metastable Zn4V2O9.

A precipitation method involving a deep eutectic solvent (DES)─a mixture of hydrogen bond donor and acceptor─is used to synthesize a ternary metal oxide. Without toxic reagents, precipitates consisting of Zn3(OH)2V2O7·nH2O and Zn5(OH)6(CO3)2 are obtained by simply introducing deionized H2O to the DES solution containing dissolved ZnO and V2O5. Manipulation of the synthetic conditions demonstrates high tunability in the size/morphology of the two-dimensional nanosheets precipitated during the dynamic equilibrium process. According to differential scanning calorimetry and high-temperature powder X-ray diffraction, Zn3V2O8 and ZnO obtained by the annealing of the precipitate are intermediates in the reaction pathway toward metastable Zn4V2O9. Intimate mixing of the metal precursors achieved by the precipitation method allows access to the metastable zinc-rich vanadate with unusually rapid heat treatment. The UV-vis and surface photovoltage spectra reveal the presence of sub-band gap states, stemming from the reduced vanadium (V4+) center. Photoelectrochemical measurements confirm weak photoanodic currents for water and methanol oxidation. For the first time, this work shows the synthesis of a metastable oxide with the DES-precipitation route and provides insight into the structure-property relationship of the zinc-rich vanadate.

Surface photovoltage spectroscopy observes junctions and carrier separation in gallium nitride nanowire arrays for overall water-splitting.

Gallium nitride (GaN) nanowire arrays on silicon are able to drive the overall water-splitting reaction with up to 3.3% solar-to-hydrogen efficiency. Photochemical charge separation is key to the operation of these devices, but details are difficult to observe experimentally because of the number of components and interfaces. Here, we use surface photovoltage spectroscopy to study charge transfer in i-, n-, and p-GaN nanowire arrays on n+-Si wafers in the presence and absence of Rh/Cr2O3 co-catalysts. The effect of the space charge layer and sub-bandgap defects on majority and minority carrier transport can be clearly observed, and estimates of the built-in potential of the junctions can be made. Transient illumination of the p-GaN/n+-Si junction generates up to -1.4 V surface photovoltage by carrier separation along the GaN nanowire axis. This process is central to the overall water-splitting function of the n+-Si/p-GaN/Rh/Cr2O3 nanowire array. These results improve our understanding of photochemical charge transfer and separation in group III-V semiconductor nanostructures for the conversion of solar energy into fuels.