Electroluminescence from HgTe Nanocrystals and Its Use for Active Imaging.

Mercury telluride (HgTe) nanocrystals are among the most versatile infrared (IR) materials with the absorption of lowest energy optical absorption which can be tuned from the visible to the terahertz range. Therefore, they have been extensively considered as near IR emitters and as absorbers for low-cost IR detectors. However, the electroluminescence of HgTe remains poorly investigated despite its ability to go toward longer wavelengths compared to traditional lead sulfide (PbS). Here, we demonstrate a light-emitting diode (LED) based on an indium tin oxide (ITO)/zinc oxide (ZnO)/ZnO-HgTe/PbS/gold-stacked structure, where the emitting layer consists of a ZnO/HgTe bulk heterojunction which drives the charge balance in the system. This LED has low turn-on voltage, long lifetime, and high brightness. Finally, we conduct short wavelength infrared (SWIR) active imaging, where illumination is obtained from a HgTe NC-based LED, and demonstrate moisture detection.

Comparative study of SiO2, Si3N4 and TiO2 thin films as passivation layers for quantum cascade lasers.

The aim of this article is to determine the best dielectric between SiO2, Si3N4 and TiO2 for quantum cascade laser (QCL) passivation layers depending on the operation wavelength. It relies on both Mueller ellipsometry measurement to accurately determine the optical constants (the refractive index n and the extinction coefficient k) of the three dielectrics, and optical simulations to determine the mode overlap with the dielectric and furthermore the modal losses in the passivation layer. The impact of dielectric thermal conductivities are taken into account and shown to be not critical on the laser performances.

Highly birefringent chalcogenide optical fiber for polarization-maintaining in the 3-8.5 µm mid-IR window.

A highly birefringent polarization-maintaining chalcogenide microstructured optical fiber (MOF) covering the 3-8.5 µm wavelength range has been realized for the first time. The fiber cross-section consists of 3 rings of circular air holes with 2 larger holes adjacent to the core. Birefringence properties are calculated by using the vector finite-element method and are compared to the experimental ones. The group birefringence is 1.5x10-3 and fiber losses are equal to 0.8 dB/m at 7.55 µm.

Photoconductive focal plane array based on HgTe quantum dots for fast and cost-effective short-wave infrared imaging.

HgTe nanocrystals, thanks to quantum confinement, present a broadly tunable band gap all over the infrared spectral range. In addition, significant efforts have been dedicated to the design of infrared sensors with an absorbing layer made of nanocrystals. However, most efforts have been focused on single pixel sensors. Nanocrystals offer an appealing alternative to epitaxially grown semiconductors for infrared imaging by reducing the material growth cost and easing the coupling to the readout circuit. Here we propose a strategy to design an infrared focal plane array from a single fabrication step. The focal plane array (FPA) relies on a specifically designed readout circuit enabling in plane electric field application and operation in photoconductive mode. We demonstrate a VGA format focal plane array with a 15 µm pixel pitch presenting an external quantum efficiency of 4-5% (15% internal quantum efficiency) for a cut-off around 1.8 µm and operation using Peltier cooling only. The FPA is compatible with 200 fps imaging full frame and imaging up to 340 fps is demonstrated by driving a reduced area of the FPA. In the last part of the paper, we discuss the cost of such sensors and show that the latter is only driven by labor costs while we estimate the cost of the NC film to be in the 10-20 € range.

HgTe Nanocrystals for SWIR Detection and Their Integration up to the Focal Plane Array.

Infrared applications remain too often a niche market due to their prohibitive cost. Nanocrystals offer an interesting alternative to reach cost disruption especially in the short-wave infrared (SWIR, λ < 1.7 µm) where material maturity is now high. Two families of materials are candidate for SWIR photoconduction: lead and mercury chalcogenides. Lead sulfide typically benefits from all the development made for a wider band gap such as the one made for solar cells, while HgTe takes advantage of the development relative to mid-wave infrared detectors. Here, we make a fair comparison of the two material detection properties in the SWIR and discuss the material stability. At such wavelengths, studies have been mostly focused on PbS rather than on HgTe, therefore we focus in the last part of the discussion on the effect of surface chemistry on the electronic spectrum of HgTe nanocrystals. We unveil that tuning the capping ligands is a viable strategy to adjust the material from the p-type to ambipolar. Finally, HgTe nanocrystals are integrated into multipixel devices to quantize spatial homogeneity and onto read-out circuits to obtain a fast and sensitive infrared laser beam profile.

Beam shaping in high-power broad-area quantum cascade lasers using optical feedback.

Broad-area quantum cascade lasers with high output powers are highly desirable sources for various applications including infrared countermeasures. However, such structures suffer from strongly deteriorated beam quality due to multimode behavior, diffraction of light and self-focusing. Quantum cascade lasers presenting high performances in terms of power and heat-load dissipation are reported and their response to a nonlinear control based on optical feedback is studied. Applying optical feedback enables to efficiently tailor its near-field beam profile. The different cavity modes are sequentially excited by shifting the feedback mirror angle. Further control of the near-field profile is demonstrated using spatial filtering. The impact of an inhomogeneous gain as well as the influence of the cavity width are investigated. Compared to existing technologies, that are complex and costly, beam shaping with optical feedback is a more flexible solution to obtain high-quality mid-infrared sources.