Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions.

This paper presents the design, fabrication, and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier ΦB of ~673 meV is extrapolated; the photodetectors show external responsivity of 0.55 mA/W at room temperature under an applied reverse bias of 8 V. In addition, the device performance is discussed in terms of normalized noise and noise-equivalent power. The proposed devices will pave the way towards the development of Er-based photodetectors and light sources to be monolithically integrated in the same silicon substrate, and both operating at 1.55 µm.

Mono- and Bilayer Graphene/Silicon Photodetectors Based on Optical Microcavities Formed by Metallic and Double Silicon-on-Insulator Reflectors: A Theoretical Investigation.

In this work, we theoretically investigate a graphene/silicon Schottky photodetector operating at 1550 nm whose performance is enhanced by interference phenomena occurring inside an innovative Fabry-Pèrot optical microcavity. The structure consists of a hydrogenated amorphous silicon/graphene/crystalline silicon three-layer realized on the top of a double silicon-on-insulator substrate working as a high-reflectivity input mirror. The detection mechanism is based on the internal photoemission effect, and the light-matter interaction is maximized through the concept of confined mode, exploited by embedding the absorbing layer within the photonic structure. The novelty lies in the use of a thick layer of gold as an output reflector. The combination of the amorphous silicon and the metallic mirror is conceived to strongly simplify the manufacturing process by using standard microelectronic technology. Configurations based on both monolayer and bilayer graphene are investigated to optimize the structure in terms of responsivity, bandwidth, and noise-equivalent power. The theoretical results are discussed and compared with the state-of-the-art of similar devices.

The Physics behind the Modulation of Thermionic Current in Photodetectors Based on Graphene Embedded between Amorphous and Crystalline Silicon.

In this work, we investigate a vertically illuminated near-infrared photodetector based on a graphene layer physically embedded between a crystalline and a hydrogenated silicon layer. Under near-infrared illumination, our devices show an unforeseen increase in the thermionic current. This effect has been ascribed to the lowering of the graphene/crystalline silicon Schottky barrier as the result of an upward shift in the graphene Fermi level induced by the charge carriers released from traps localized at the graphene/amorphous silicon interface under illumination. A complex model reproducing the experimental observations has been presented and discussed. Responsivity of our devices exhibits a maximum value of 27 mA/W at 1543 nm under an optical power of 8.7 µW, which could be further improved at lower optical power. Our findings offer new insights, highlighting at the same time a new detection mechanism which could be exploited for developing near-infrared silicon photodetectors suitable for power monitoring applications.

A 2.5 ns switching time MachZehnder modulator in as-deposited a-Si:H.

A very simple and fast Mach-Zehnder electro-optic modulator based on a p-i-n configuration, operating at λ = 1.55 µm, has been fabricated at 170 °C using the low cost technology of hydrogenated amorphous silicon (a-Si:H). In spite of the device simplicity, refractive index modulation was achieved through the free carrier dispersion effect resulting in characteristic rise and fall times of ~2.5 ns. By reverse biasing the p-i-n device, the voltage-length product was estimated to be V(π)∙L(π) = 40 V∙cm both from static and dynamic measurements. Such bandwidth performance in as-deposited a-Si:H demonstrates the potential of this material for the fabrication of fast active photonic devices integrated on standard microelectronic substrates.

Bioconjugation of a PNA Probe to Zinc Oxide Nanowires for Label-Free Sensing.

Zinc oxide nanowires (ZnONWs) are largely used in biosensing applications due to their large specific surface area, photoluminescence emission and electron mobility. In this work, the surfaces of ZnONWs are modified by covalent bioconjugation of a peptidic nucleic acid (PNA) probe whose sequence is properly chosen to recognize a complementary DNA (cDNA) strand corresponding to a tract of the CD5 mRNA, the main prognostic marker of chronic lymphatic leukemia. The interaction between PNA and cDNA is preliminarily investigated in solution by circular dichroism, CD melting, and polyacrylamide gel electrophoresis. After the immobilization of the PNA probe on the ZnONW surface, we demonstrate the ability of the PNA-functionalized ZnONW platform to detect cDNA in the µM range of concentration by electrical, label-free measurements. The specificity of the sensor is also verified against a non-complementary DNA sequence. These preliminary results highlight the potential application of PNA-bioconjugated ZnONWs to label-free biosensing of tumor markers.