RESUMO
Highly conducting, mixed-valence, multi-component nickel bis(diselenolene) salts were obtained by electrocrystallization of the monoanionic species [Ni(Me-thiazds)2]-1 (Me-thiazds: N-methyl-1,3-thiazoline-2-thione-4,5-diselenolate), with 1:2 and 1:3 stoichiometries depending of the counter ion used (Et4N+ and nBu4N+ vs Ph4P+, respectively). This behavior strongly differs from that of the corresponding monoanionic dithiolene complexes whose oxidation afforded the single component neutral species. This provides additional rare examples of mixed-valence conducting salts of nickel diselenolene complexes, only known in two examples with the dsit (1,3-dithiole-2-thione-4,5-diselenolate) and dsise (1,3-dithiole-2-selone-4,5-diselenolate) ligands. The mixed-valence salts form highly dimerized or trimerized bi- and trimetallic units, rarely seen with such nickel complexes. Transport measurements under a high pressure (up to 10 GPa) and band structure calculations confirm the semiconducting character of [Ph4P][Ni(Me-thiazds)2]3 and the quasi metallic character of [Et4N][Ni(Me-thiazds)2]2 and [NBu4]x[Ni(Me-thiazds)2]2 salts (0 < x < 1).
RESUMO
Two selenated analogues of the all-sulfur single-component molecular conductor [Ni(Et-thiazdt)2] (Et-thiazdt = N-ethylthiazoline-2-thione-4,5-dithiolate) have been prepared from their precursor radical-anion complexes. Replacement of the thione by a selenone moiety gives the neutral [Ni(Et-thiazSedt)2] complex. It adopts an unprecedented solid-state organization (for neutral nickel complexes), with the formation of perfectly eclipsed dimers and very short intermolecular Se···Se contacts (81% of the van der Waals contact distance). Limited interactions between dimers leads to a large semiconducting gap and low conductivity (σRT = 1.7 × 10-5 S cm-1). On the other hand, going from the neutral [Ni(Et-thiazdt)2] dithiolene complex to the corresponding [Ni(Et-thiazds)2] diselenolene complex gives rise to a more conventional layered structure built out of uniform stacks of the diselenolene complexes, different, however, from the all-sulfur analogue [Ni(Et-thiazdt)2]. Band structure calculations show an essentially 1D electronic structure with large band dispersion and a small HOMO-LUMO gap. Under high pressures (up to 19 GPa), the conductivity increases by 4 orders of magnitude and the activation energy is decreased from 120 meV to only 13 meV, with an abrupt change observed around 10 GPa, suggesting a structural phase transition under pressure.
RESUMO
The prototypical [Ni(dmit)2] complex (dmit: 1,3-dithiole-2-thione-4,5-dithiolate) is modified here by combining the N-R substitution found in [Ni(R-thiazdt)2] complexes (R-thiazdt: N-alkyl-thiazoline-2-thione-4,5-dithiolate) and the selone substitution found in [Ni(dmiSe)2] complex (dmiSe: 1,3-dithiole-2-selone-4,5-dithiolate) to give a novel N-methyl substituted, radical anionic complex formulated as [Ni(Me-thiazSe-dt)2]1- (Me-thiazSe-dt: N-methyl-thiazoline-2-selone-4,5-dithiolate). Both this anionic complex and its mixed-valence Et4N+ salt crystallize with a rare cis arrangement of the two dithiolene ligands around the Ni atom. In the 1 : 2 [Et4N][Ni(Me-thiazSe-dt)2]2 salt, the complexes organize into dimerized chains well isolated from each other, giving the salt a strong one-dimensional character. It shows however a high RT conductivity of 4.6 S cm-1 and small activation energy of 33 meV, indicating a possible Mott insulator behavior, which is not suppressed under pressures up to 10 GPa.
RESUMO
Introduction of hydrogen bonding (HB) interactions in single component conductors derived from nickel and gold bis(dithiolene) complexes is explored with the 2-alkylthio-1,3-thiazole-4,5-dithiolate (RS-tzdt) with R = CH2CH2OH through the preparation of the neutral [Ni(HOEtS-tzdt)2]0 (closed-shell) and [Au(HOEtS-tzdt)2]Ë (radical) complexes. At variance with many other radical gold dithiolene complexes which have a strong tendency to dimerize in the solid state, [Au(HOEtS-tzdt)2]Ë crystallizes into uniform stacks interconnected by strong O-HN HB involving the nitrogen atom of the thiazole ring. [Au(HOEtS-tzdt)2]Ë is isostructural with its neutral, closed-shell nickel analog [Ni(HOEtS-tzdt)2]0, a rare situation in this metal bis(dithiolene) chemistry. It demonstrates how the strength of the HB directing motif can control the overall structural arrangement to stabilize the same structure despite a different electron count. The nickel complex behaves as a band semiconductor with weak room temperature conductivity (1.6 × 10-5 S cm-1), while the gold complex is described as a Mott insulator with a three orders of magnitude improved conductivity (6 × 10-2 S cm-1).
RESUMO
Neutral nickel bis(dithiolene) complexes, because of their closed-shell character, are usually considered as insulating materials, unless they are formed out of highly delocalized tetrathiafulvalenedithiolate ligands. We describe here an original series of S-alkyl substituted neutral bis(thiazole-4,5-dithiolate) nickel complexes formulated as [Ni(RS-tzdt)2] (R = Me, Et), which organize in the solid state into uniform stacks and exhibit semiconducting behavior, with room temperature conductivities comparable to those reported in the prototypical [Ni(dmit)2] and [Ni(Et-thiazdt)2] neutral complexes. These findings provide new perspectives in the current search for single component molecular conductors.