Pesquisa | BVS IEC

1.

Direct photoemission study of the antibonding surface-state band on Ge(111)2 x 1.

Nicholls JM; Mrtensson P; Hansson GV.

Phys Rev Lett ; 54(21): 2363-2366, 1985 May 27.

Artigo em Inglês | MEDLINE | ID: mdl-10031321

2.

Identification of Grown-In Efficient Nonradiative Recombination Centers in Molecular Beam Epitaxial Silicon.

Chen WM; Buyanova IA; Ni W; Hansson GV; Monemar B.

Phys Rev Lett ; 77(20): 4214-4217, 1996 Nov 11.

Artigo em Inglês | MEDLINE | ID: mdl-10062477

3.

Band offsets in pseudomorphically grown Si/Si1-xGex heterostructures studied with core-level x-ray photoelectron spectroscopy.

Ni WX; Hansson GV.

Phys Rev B Condens Matter ; 42(5): 3030-3037, 1990 Aug 15.

Artigo em Inglês | MEDLINE | ID: mdl-9995796

4.

Symmetry properties and band structure of surface states on the single-domain, hydrogen-chemisorbed Si(100)2 x 1:H surface.

Johansson LS; Uhrberg RI; Hansson GV.

Phys Rev B Condens Matter ; 38(18): 13490-13493, 1988 Dec 15.

Artigo em Inglês | MEDLINE | ID: mdl-9946347

5.

Similarity of Si(110)5 x 1 and Si(111)2 x 1 surfaces.

Mårtensson P; Hansson GV; Chiaradia P.

Phys Rev B Condens Matter ; 31(4): 2581-2583, 1985 Feb 15.

Artigo em Inglês | MEDLINE | ID: mdl-9936095

6.

Photoemission study of the antibonding surface-state band on Si(111)2 x 1.

Mrtensson P; Cricenti A; Hansson GV.

Phys Rev B Condens Matter ; 32(10): 6959-6961, 1985 Nov 15.

Artigo em Inglês | MEDLINE | ID: mdl-9936822

7.

Photoemission study of the surface states that pin the Fermi level at Si(100)2 x 1 surfaces.

Mårtensson P; Cricenti A; Hansson GV.

Phys Rev B Condens Matter ; 33(12): 8855-8858, 1986 Jun 15.

Artigo em Inglês | MEDLINE | ID: mdl-9938308

8.

New method to study band offsets applied to strained Si/Si1-xGex(100) heterojunction interfaces.

Ni W; Knall J; Hansson GV.

Phys Rev B Condens Matter ; 36(14): 7744-7747, 1987 Nov 15.

Artigo em Inglês | MEDLINE | ID: mdl-9942570

9.

Temperature-induced manipulation of nucleation during Si and Ge molecular-beam epitaxy.

Larsson MI; Ni WX; Hansson GV.

Phys Rev B Condens Matter ; 50(8): 5335-5344, 1994 Aug 15.

Artigo em Inglês | MEDLINE | ID: mdl-9976875

10.

Surface states on Si(111) sqrt 3-bar x sqrt 3-bar-In: Experiment and theory.

Nicholls JM; Mrtensson P; Hansson GV; Northrup JE.

Phys Rev B Condens Matter ; 32(2): 1333-1335, 1985 Jul 15.

Artigo em Inglês | MEDLINE | ID: mdl-9937154

11.

New surface states on the annealed Ge(111) surface.

Nicholls JM; Hansson GV; Uhrberg RI; Flodström SA.

Phys Rev B Condens Matter ; 33(8): 5555-5559, 1986 Apr 15.

Artigo em Inglês | MEDLINE | ID: mdl-9939062

12.

Si(111)7 x 7-Ge and Si(111)5 x 5-Ge surfaces studied with angle-resolved photoemission.

Martensson P; Cricenti A; Johansson LS; Hansson GV.

Phys Rev B Condens Matter ; 34(4): 3015-3018, 1986 Aug 15.

Artigo em Inglês | MEDLINE | ID: mdl-9940028

13.

Analysis of resonant-tunneling transport.

Shen GD; Xu DX; Willander M; Hansson GV.

Phys Rev B Condens Matter ; 45(16): 9424-9427, 1992 Apr 15.

Artigo em Inglês | MEDLINE | ID: mdl-10000811

14.

Surface-state band structure of the Si(100)2 x 1 surface studied with polarization-dependent angle-resolved photoemission on single-domain surfaces.

Johansson LS; Uhrberg RI; Mårtensson P; Hansson GV.

Phys Rev B Condens Matter ; 42(2): 1305-1315, 1990 Jul 15.

Artigo em Inglês | MEDLINE | ID: mdl-9995542

15.

Photoemission study of the surface and bulk electronic structures of Si(111)7 x 7 and Si(111) <= 3-bar x <= 3-bar:Al.

Uhrberg RI; Hansson GV; Nicholls JM; Persson PE; Flodström SA.

Phys Rev B Condens Matter ; 31(6): 3805-3810, 1985 Mar 15.

Artigo em Inglês | MEDLINE | ID: mdl-9936279

16.

Surface electronic structure of GaAs(110)1 x 1-Sb studied with angle-resolved photoelectron spectroscopy.

Mrtensson P; Hansson GV; Lähdeniemi M; Magnusson KO; Wiklund S; Nicholls JM.

Phys Rev B Condens Matter ; 33(10): 7399-7402, 1986 May 15.

Artigo em Inglês | MEDLINE | ID: mdl-9938104

17.

Surface electronic structure of Si(111)7 x 7-Ge and Si(111)5 x 5-Ge studied with photoemission and inverse photoemission.

Martensson P; Ni WX; Hansson GV; Nicholls JM; Reihl B.

Phys Rev B Condens Matter ; 36(11): 5974-5981, 1987 Oct 15.

Artigo em Inglês | MEDLINE | ID: mdl-9942278

18.

Effect of ion bombardment on deep photoluminescence bands in p-type boron-modulation-doped Si layers grown by molecular-beam epitaxy.

Buyanova IA; Chen WM; Henry A; Ni W; Hansson GV; Monemar B.

Phys Rev B Condens Matter ; 52(16): 12006-12012, 1995 Oct 15.

Artigo em Inglês | MEDLINE | ID: mdl-9980340

19.

Photoluminescence of the two-dimensional hole gas in p-type delta -doped Si layers.

Buyanova IA; Chen WM; Henry A; Ni W; Hansson GV; Monemar B.

Phys Rev B Condens Matter ; 53(15): 9587-9590, 1996 Apr 15.

Artigo em Inglês | MEDLINE | ID: mdl-9982507

20.

Fermi-edge singularity in p-type modulation-doped SiGe quantum wells.

Buyanova IA; Chen WM; Henry A; Ni W; Hansson GV; Monemar B.

Phys Rev B Condens Matter ; 53(4): R1701-R1704, 1996 Jan 15.

Artigo em Inglês | MEDLINE | ID: mdl-9983685

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