Low-loss SiGe waveguides for mid-infrared photonics fabricated on 200 mm wafers.

This article presents low-loss mid-infrared waveguides fabricated on a Ge-rich SiGe strain-relaxed buffer grown on an industrial-scale 200 mm wafer, with propagation losses below 0.5 dB/cm for 5-7 µm wavelengths and below 5 dB/cm up to 11 µm. Investigation reveals free-carrier absorption as the primary loss factor for 5-6.5 µm and silicon multiphonon absorption beyond 7 µm wavelength. This result establishes a foundation for a scalable, silicon-compatible mid-infrared platform, enabling the realisation of photonic integrated circuits for various applications in the mid-infrared spectral region, from hazard detection to spectroscopy and military imaging.

Reference-free x-ray fluorescence analysis with a micrometer-sized incident beam.

Spatially resolved x-ray fluorescence (XRF) based analysis employing incident beam sizes in the low micrometer range (µXRF) is widely used to study lateral composition changes of various types of microstructured samples. However, up to now the quantitative analysis of such experimental datasets could only be realized employing adequate calibration or reference specimen. In this work, we extent the applicability of the so-called reference-free XRF approach to enable reference-freeµXRF analysis. Here, no calibration specimen are needed in order to derive a quantitative and position sensitive composition of the sample of interest. The necessary instrumental steps to realize reference-freeµXRF are explained and a validation of ref.-freeµXRF against ref.-free standard XRF is performed employing laterally homogeneous samples. Finally, an application example from semiconductor research is shown, where the lateral sample features require the usage of ref.-freeµXRF for quantitative analysis.

Single SiGe quantum dot emission deterministically enhanced in a high-Q photonic crystal resonator.

We report the resonantly enhanced radiative emission from a single SiGe quantum dot (QD), which is deterministically embedded into a bichromatic photonic crystal resonator (PhCR) at the position of its largest modal electric field by a scalable method. By optimizing our molecular beam epitaxy (MBE) growth technique, we were able to reduce the amount of Ge within the whole resonator to obtain an absolute minimum of exactly one QD, accurately positioned by lithographic methods relative to the PhCR, and an otherwise flat, a few monolayer thin, Ge wetting layer (WL). With this method, record quality (Q) factors for QD-loaded PhCRs up to Q ∼ 105 are achieved. A comparison with control PhCRs on samples containing a WL but no QDs is presented, as well as a detailed analysis of the dependence of the resonator-coupled emission on temperature, excitation intensity, and emission decay after pulsed excitation. Our findings undoubtedly confirm a single QD in the center of the resonator as a potentially novel photon source in the telecom spectral range.

Effect of Non-Markovian Collisions on Measured Integrated Line Shapes of CO.

Using cavity ring-down spectroscopy to probe R-branch transitions of CO in N_{2}, we show that the spectral core of the line shapes associated with the first few rotational quantum numbers, J, can be accurately modeled using a sophisticated line profile, provided that a pressure-dependent line area is introduced. This correction vanishes as J increases and is always negligible in CO-He mixtures. The results are supported by molecular dynamics simulations attributing the effect to non-Markovian behavior of collisions at short times. This work has large implications because corrections must be considered for accurate determinations of integrated line intensities, and for spectroscopic databases and radiative transfer codes used for climate predictions and remote sensing.

Composition Dependent Electrical Transport in Si1-x Gex Nanosheets with Monolithic Single-Elementary Al Contacts.

Si1-x Gex is a key material in modern complementary metal-oxide-semiconductor and bipolar devices. However, despite considerable efforts in metal-silicide and -germanide compound material systems, reliability concerns have so far hindered the implementation of metal-Si1-x Gex junctions that are vital for diverse emerging "More than Moore" and quantum computing paradigms. In this respect, the systematic structural and electronic properties of Al-Si1-x Gex heterostructures, obtained from a thermally induced exchange between ultra-thin Si1-x Gex nanosheets and Al layers are reported. Remarkably, no intermetallic phases are found after the exchange process. Instead, abrupt, flat, and void-free junctions of high structural quality can be obtained. Interestingly, ultra-thin interfacial Si layers are formed between the metal and Si1-x Gex segments, explaining the morphologic stability. Integrated into omega-gated Schottky barrier transistors with the channel length being defined by the selective transformation of Si1-x Gex into single-elementary Al leads, a detailed analysis of the transport is conducted. In this respect, a report on a highly versatile platform with Si1-x Gex composition-dependent properties ranging from highly transparent contacts to distinct Schottky barriers is provided. Most notably, the presented abrupt, robust, and reliable metal-Si1-x Gex junctions can open up new device implementations for different types of emerging nanoelectronic, optoelectronic, and quantum devices.

Mid-infrared supercontinuum generation in silicon-germanium all-normal dispersion waveguides.

We demonstrate coherent supercontinuum generation spanning over an octave from a silicon germanium-on-silicon waveguide using ∼200fs pulses at a wavelength of 4 µm. The waveguide is engineered to provide low all-normal dispersion in the TM polarization. We validate the coherence of the generated supercontinuum via simulations, with a high degree of coherence across the entire spectrum. Such a generated supercontinuum could lend itself to pulse compression down to 22 fs.

GeSn heterostructure micro-disk laser operating at 230 K.

We demonstrate lasing up to 230 K in a GeSn heterostructure micro-disk cavity. The GeSn 16.0% optically active layer was grown on a step-graded GeSn buffer, limiting the density of misfit dislocations. The lasing wavelengths shifted from 2720 to 2890 nm at 15 K up to 3200 nm at 230 K. Compared to results reported elsewhere, we attribute the increase in maximal lasing temperature to two factors: a stronger optical confinement by a thicker active layer and a better carrier confinement provided by a GeSn 13.8% / GeSn 16.0% / GeSn 13.8% double heterostructure.

Effect of humidity on the absorption continua of CO2 and N2 near 4 µm: Calculations, comparisons with measurements, and consequences for atmospheric spectra.

We present a theoretical study of the effects of collisions with water vapor molecules on the absorption, around 4 µm, in both the high frequency wing of the CO2 ν3 band and the collision-induced fundamental band of N2. Calculations are made for the very first time, showing that predictions based on classical molecular dynamics simulations enable, without adjustment of any parameter, very satisfactory agreement with the few available experimental determinations. This opens the route for a future study in which accurate temperature-dependent (semi-empirical) models will be built and checked through comparisons between computed and measured atmospheric spectra. This is of interest since, as demonstrated by simulations, neglecting the humidity of air can lead to significant modifications of the atmospheric transmission (and thus also emission) between 2000 and 2800 cm-1.

SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters.

SiGeSn ternaries are grown on Ge-buffered Si wafers incorporating Si or Sn contents of up to 15 at%. The ternaries exhibit layer thicknesses up to 600 nm, while maintaining a high crystalline quality. Tuning of stoichiometry and strain, as shown by means of absorption measurements, allows bandgap engineering in the short-wave infrared range of up to about 2.6 µm. Temperature-dependent photoluminescence experiments indicate ternaries near the indirect-to-direct bandgap transition, proving their potential for ternary-based light emitters in the aforementioned optical range. The ternaries' layer relaxation is also monitored to explore their use as strain-relaxed buffers, since they are of interest not only for light emitting diodes investigated in this paper but also for many other optoelectronic and electronic applications. In particular, the authors have epitaxially grown a GeSn/SiGeSn multiquantum well heterostructure, which employs SiGeSn as barrier material to efficiently confine carriers in GeSn wells. Strong room temperature light emission from fabricated light emitting diodes proves the high potential of this heterostructure approach.

Integrated waveguide PIN photodiodes exploiting lateral Si/Ge/Si heterojunction.

Germanium photodetectors are considered to be mature components in the silicon photonics device library. They are critical for applications in sensing, communications, or optical interconnects. In this work, we report on design, fabrication, and experimental demonstration of an integrated waveguide PIN photodiode architecture that calls upon lateral double Silicon/Germanium/Silicon (Si/Ge/Si) heterojunctions. This photodiode configuration takes advantage of the compatibility with contact process steps of silicon modulators, yielding reduced fabrication complexity for transmitters and offering high-performance optical characteristics, viable for high-speed and efficient operation near 1.55 µm wavelengths. More specifically, we experimentally obtained at a reverse voltage of 1V a dark current lower than 10 nA, a responsivity higher than 1.1 A/W, and a 3 dB opto-electrical cut-off frequency over 50 GHz. The combined benefits of decreased process complexity and high-performance device operation pave the way towards attractive integration strategies to deploy cost-effective photonic transceivers on silicon-on-insulator substrates.

Rotated echoes of molecular alignment: fractional, high order and imaginary.

We report experimental observations of rotated echoes of alignment induced by a pair of time-delayed and polarization-skewed femtosecond laser pulses interacting with an ensemble of molecular rotors. Rotated fractional echoes, rotated high order echoes and rotated imaginary echoes are directly visualized by using the technique of coincident Coulomb explosion imaging. We show that the echo phenomenon not only exhibits temporal recurrences but also spatial rotations determined by the polarization of the time-delayed second pulse. The dynamics of echo formation is well described by the laser-induced filamentation in rotational phase space. The quantum-mechanical simulation shows good agreements with the experimental results.

Super- and sub-Lorentzian effects in the Ar-broadened line wings of HCl gas.

Using previously recorded spectra of HCl diluted in Ar gas at room temperature for several pressure conditions, we show that the absorptions in between successive P and R transitions are significantly different from those predicted using purely Lorentzian line shapes. Direct theoretical predictions of the spectra are also made using requantized classical molecular dynamics simulations and an input HCl-Ar interaction potential. They provide the time evolution of the dipole auto-correlation function (DAF) whose Fourier-Laplace transform yields the absorption spectrum. These calculations very well reproduce the observed super-Lorentzian behavior in the troughs between the intense lines in the central part of the band and the tendency of absorption to become sub-Lorentzian in the band wings between high J lines. The analysis shows that the former behavior is essentially due to incomplete collisions which govern the DAF at very short times. In addition, the increasing influence of line-mixing when going away from the band center explains the tendency of absorption to become more and more sub-Lorentzian in the wings.

Dynamics and Hydrodynamics of Molecular Superrotors.

In recent years, several femtosecond laser techniques have been developed that can make gas molecules rotate extremely fast, whereas the gas stays translationally cold. Herein we use molecular-dynamics simulations to investigate the collisional dynamics of gases of such molecules ("superrotors"). We found that the common route of superrotors to equilibrium is rather generic. It starts with a long-lasting "gyroscopic stage", during which the molecules keep their fast rotation and the orientation of their angular momentum despite the many collisions they undergo. The inhibited rotational relaxation is characterized by a persistent anisotropy in the molecular angular distribution, manifested in long-lasting optical birefringence and in anisotropic diffusion of the gas. Later, the gyroscopic stage is abruptly terminated by a self-accelerating explosive rotational-translational energy exchange that generates sound and macroscopic vortices with a hot rotating core.

Design, fabrication and characterization of an AWG at 4.5 µm.

In this paper, we present the design, the fabrication and the characterization of an Arrayed Waveguide Grating (AWG) based on a SiGe graded index waveguide platform, operating at 4.5 µm. These devices were specifically designed to work together with an array of Distributed Feedback Bragg Quantum Cascade Lasers (DFB-QCL) emitting at different wavelengths. The AWG enables to combine the different light sources into a single output and the design adopted allows to maximize transmission over the entire spectral range defined by the array of DFB-QCLs.

Low loss SiGe graded index waveguides for mid-IR applications.

In the last few years Mid InfraRed (MIR) photonics has received renewed interest for a variety of commercial, scientific and military applications. This paper reports the design, the fabrication and the characterization of SiGe/Si based graded index waveguides and photonics integrated devices. The thickness and the Ge concentration of the core layer were optimized to cover the full [3 - 8 µm] band. The developed SiGe/Si stack has been used to fabricate straight waveguides and basic optical functions such as Y-junction, crossings and couplers. Straight waveguides showed losses as low as 1 dB/cm at λ = 4.5 µm and 2 dB/cm at 7.4 µm. Likewise straight waveguides, basic functions exhibit nearly theoretical behavior with losses compatible with the implementation of more complex functions in integrated photonics circuits. To the best of our knowledge, the performances of those Mid-IR waveguides significantly exceed the state of the art, confirming the feasibility of using graded SiGe/Si devices in a wide range of wavelengths. These results represent a capital breakthrough to develop a photonic platform working in the Mid-IR range.

Ab initio calculations for the far infrared collision induced absorption by N2 gas.

We present (far-infrared) Collision Induced Absorption (CIA) spectra calculations for pure gaseous N2 made for the first time, from first-principles. They were carried out using classical molecular dynamics simulations based on ab initio predictions of both the intermolecular potential and the induced-dipole moment. These calculations reproduce satisfactory well the experimental values (intensity and band profile) with agreement within 3% at 149 K. With respect to results obtained with only the long range (asymptotic) dipole moment (DM), including the short range overlap contribution improves the band intensity and profile at 149 K, but it deteriorates them at 296 K. The results show that the relative contribution of the short range DM to the band intensity is typically around 10%. We have also examined the sensitivity of the calculated CIA to the intermolecular potential anisotropy, providing a test of the so-called isotropic approximation used up to now in all N2 CIA calculations. As all these effects interfere simultaneously with quantitatively similar influences (around 10%), it is rather difficult to assert which one could explain remaining deviations with the experimental results. Furthermore, the rather large uncertainties and sometimes inconsistencies of the available measurements forbid any definitive conclusion, stressing the need for new experiments.

Variable-length cell for studies of gas spectra with extremely short optical paths.

We present a cell for studies of light transmission through very strongly absorbing gases. It uses a fixed window and a mirror, parallel to the latter and attached to a micrometric linear motion feedthrough monitoring mirror-window distances from 0 to a couple of centimeters. This device is tested by recording CO2 gas spectra near 4.3 µm using a Fourier transform spectrometer. Their analysis shows that optical-path lengths between 20 and 2000 µm have been obtained. This now enables spectroscopic measurements of self-broadening coefficients of O16C12O16 lines in the ν3 band, for instance, and opens perspectives for optical soundings of thin films of porous materials.

Mlines characterization of the refractive index profile of SiGe gradient waveguides at 2.15 µm.

SiGe alloys present a large Infra-Red transparency window and a full compatibility with the standard Complementary Metal Oxide Semiconductor processing making them suitable for applications in integrated optics. In this paper we report on Mlines characterization of Si(1-x)Ge(x) graded index waveguides at 2.15 µm. First, a law giving the refractive index of a Si(1-x)Ge(x) alloy as a function of the Ge content x: n = 1.342x(2) + 0.295x + 3.451, has been experimentally established in the 0 < x < 0.4 range. Then, we have demonstrated that our methodology based on Mlines measurements can be used as short-loop non-destructive technique to provide feedback for sample growth.

Atomistic Insights into Ultrafast SiGe Nanoprocessing.

Controlling ultrafast material transformations with atomic precision is essential for future nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase transitions, is a powerful way to achieve this but requires careful optimization together with the appropriate system design. We present a multiscale LA computational framework that can simulate atom-by-atom the highly out-of-equilibrium kinetics of a material as it interacts with the laser, including effects of structural disorder. By seamlessly coupling a macroscale continuum solver to a nanoscale superlattice kinetic Monte Carlo code, this method overcomes the limits of state-of-the-art continuum-based tools. We exploit it to investigate nontrivial changes in composition, morphology, and quality of laser-annealed SiGe alloys. Validations against experiments and phase-field simulations as well as advanced applications to strained, defected, nanostructured, and confined SiGe are presented, highlighting the importance of a multiscale atomistic-continuum approach. Current applicability and potential generalization routes are finally discussed.

Zero-bias 40Gbit/s germanium waveguide photodetector on silicon.

We report on lateral pin germanium photodetectors selectively grown at the end of silicon waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge photodetectors using three kinds of experimental set-ups. In addition, a responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were demonstrated under zero-bias at a wavelength of 1.55 µm.